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SCT040H120G3AG中文資料意法半導(dǎo)體數(shù)據(jù)手冊(cè)PDF規(guī)格書(shū)

SCT040H120G3AG
廠(chǎng)商型號(hào)

SCT040H120G3AG

功能描述

Automotive-grade silicon carbide Power MOSFET 1200 V, 40 mΩ typ., 40 A in an H2PAK-7 package

絲印標(biāo)識(shí)

SCT40H12G3AG

封裝外殼

H2PAK-7

文件大小

386.35 Kbytes

頁(yè)面數(shù)量

14 頁(yè)

生產(chǎn)廠(chǎng)商 STMicroelectronics
企業(yè)簡(jiǎn)稱(chēng)

STMICROELECTRONICS意法半導(dǎo)體

中文名稱(chēng)

意法半導(dǎo)體集團(tuán)官網(wǎng)

原廠(chǎng)標(biāo)識(shí)
數(shù)據(jù)手冊(cè)

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更新時(shí)間

2025-3-27 16:10:00

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SCT040H120G3AG規(guī)格書(shū)詳情

Features

? AEC-Q101 qualified

? Very low RDS(on) over the entire temperature range

? High speed switching performances

? Very fast and robust intrinsic body diode

? Source sensing pin for increased efficiency

Applications

? Main inverter (electric traction)

? DC/DC converter for EV/HEV

? On board charger (OBC)

Description

This silicon carbide Power MOSFET device has been developed using ST’s

advanced and innovative 3rd generation SiC MOSFET technology. The device

features a very low RDS(on) over the entire temperature range combined with

low capacitances and very high switching operations, which improve application

performance in frequency, energy efficiency, system size and weight reduction.

供應(yīng)商 型號(hào) 品牌 批號(hào) 封裝 庫(kù)存 備注 價(jià)格
STMicroelectronics
24+
原廠(chǎng)封裝
12634
有掛就有貨只做原裝正品
詢(xún)價(jià)
STMicroelectronics
23+
SMD
3652
原廠(chǎng)正品現(xiàn)貨供應(yīng)SIC全系列
詢(xún)價(jià)
ST/意法
22+
TO-263-7
25800
原裝正品支持實(shí)單
詢(xún)價(jià)
ST
22+
N/A
17000
只做原裝正品
詢(xún)價(jià)
ST
22+
NA
5000
原裝正品支持實(shí)單
詢(xún)價(jià)
AUK
25+
TO220F
880000
明嘉萊只做原裝正品現(xiàn)貨
詢(xún)價(jià)
ST
兩年內(nèi)
NA
326
實(shí)單價(jià)格可談
詢(xún)價(jià)
24+
100
詢(xún)價(jià)
STN
2324+
11982
原裝正品,超低價(jià)出售
詢(xún)價(jià)
ST
22+
30000
原裝現(xiàn)貨,可追溯原廠(chǎng)渠道
詢(xún)價(jià)