首頁>SCT070H120G3AG>規(guī)格書詳情
SCT070H120G3AG中文資料意法半導(dǎo)體數(shù)據(jù)手冊PDF規(guī)格書
廠商型號 |
SCT070H120G3AG |
功能描述 | Automotive-grade silicon carbide Power MOSFET 1200 V, 63 mΩ typ., 30 A in an H2PAK-7 package |
絲印標識 | |
封裝外殼 | H2PAK-7 |
文件大小 |
396.48 Kbytes |
頁面數(shù)量 |
14 頁 |
生產(chǎn)廠商 | STMicroelectronics |
企業(yè)簡稱 |
STMICROELECTRONICS【意法半導(dǎo)體】 |
中文名稱 | 意法半導(dǎo)體集團官網(wǎng) |
原廠標識 | |
數(shù)據(jù)手冊 | |
更新時間 | 2025-2-3 11:10:00 |
SCT070H120G3AG規(guī)格書詳情
Features
? AEC-Q101 qualified
? Very low RDS(on) over the entire temperature range
? High speed switching performances
? Very fast and robust intrinsic body diode
? Source sensing pin for increased efficiency
Applications
? Main inverter (electric traction)
? DC/DC converter for EV/HEV
? On board charger (OBC)
Description
This silicon carbide Power MOSFET device has been developed using ST’s
advanced and innovative 3rd generation SiC MOSFET technology. The device
features a very low RDS(on) over the entire temperature range combined with
low capacitances and very high switching operations, which improve application
performance in frequency, energy efficiency, system size and weight reduction.
供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
TLC競沃 |
23+ |
11200 |
原廠授權(quán)一級代理、全球訂貨優(yōu)勢渠道、可提供一站式BO |
詢價 | |||
24+ |
N/A |
60000 |
一級代理-主營優(yōu)勢-實惠價格-不悔選擇 |
詢價 | |||
TLC(競沃) |
2112+ |
SMD |
115000 |
1000個/圓盤一級代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨, |
詢價 | ||
24+ |
12 |
詢價 | |||||
Panduit Corp |
2010+ |
N/A |
66 |
加我qq或微信,了解更多詳細信息,體驗一站式購物 |
詢價 | ||
遠見電子 |
21+ |
2970 |
全新原裝鄙視假貨15118075546 |
詢價 | |||
ST |
22+ |
BGA |
1000 |
原裝正品碳化硅 |
詢價 | ||
ST/意法 |
22+ |
TO-263-7 |
25800 |
原裝正品支持實單 |
詢價 | ||
ST(意法) |
21+ |
N/A |
3768 |
全新原裝虧本出 |
詢價 | ||
PANDUIT |
20+ |
連接器 |
93 |
就找我吧!--邀您體驗愉快問購元件! |
詢價 |