- IC/元器件
- PDF資料
- 商情資訊
- 絲印
首頁>SCT070H120G3AG>規(guī)格書詳情
SCT070H120G3AG中文資料意法半導(dǎo)體數(shù)據(jù)手冊PDF規(guī)格書

廠商型號 |
SCT070H120G3AG |
功能描述 | Automotive-grade silicon carbide Power MOSFET 1200 V, 63 mΩ typ., 30 A in an H2PAK-7 package |
絲印標(biāo)識 | |
封裝外殼 | H2PAK-7 |
文件大小 |
396.48 Kbytes |
頁面數(shù)量 |
14 頁 |
生產(chǎn)廠商 | STMicroelectronics |
企業(yè)簡稱 |
STMICROELECTRONICS【意法半導(dǎo)體】 |
中文名稱 | 意法半導(dǎo)體集團官網(wǎng) |
原廠標(biāo)識 | ![]() |
數(shù)據(jù)手冊 | |
更新時間 | 2025-3-10 18:03:00 |
人工找貨 | SCT070H120G3AG價格和庫存,歡迎聯(lián)系客服免費人工找貨 |
SCT070H120G3AG規(guī)格書詳情
Features
? AEC-Q101 qualified
? Very low RDS(on) over the entire temperature range
? High speed switching performances
? Very fast and robust intrinsic body diode
? Source sensing pin for increased efficiency
Applications
? Main inverter (electric traction)
? DC/DC converter for EV/HEV
? On board charger (OBC)
Description
This silicon carbide Power MOSFET device has been developed using ST’s
advanced and innovative 3rd generation SiC MOSFET technology. The device
features a very low RDS(on) over the entire temperature range combined with
low capacitances and very high switching operations, which improve application
performance in frequency, energy efficiency, system size and weight reduction.
供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
AIM |
23+ |
8215 |
現(xiàn)貨供應(yīng),當(dāng)天可交貨!免費送樣,原廠技術(shù)支持!!! |
詢價 | |||
TLC(競沃) |
24+ |
con |
10000 |
查現(xiàn)貨到京北通宇商城 |
詢價 | ||
TLC競沃 |
23+ |
11200 |
原廠授權(quán)一級代理、全球訂貨優(yōu)勢渠道、可提供一站式BO |
詢價 | |||
ST(意法) |
23+ |
NA |
20094 |
正納10年以上分銷經(jīng)驗原裝進口正品做服務(wù)做口碑有支持 |
詢價 | ||
遠見電子 |
21+ |
2970 |
全新原裝鄙視假貨15118075546 |
詢價 | |||
ST(意法) |
21+ |
N/A |
3768 |
全新原裝虧本出 |
詢價 | ||
ST |
24+ |
TO-263-8 |
4580 |
專注ST品牌原裝正品代理分銷,認(rèn)準(zhǔn)水星電子 |
詢價 | ||
24+ |
12 |
詢價 | |||||
ST(意法) |
23+ |
15000 |
專業(yè)幫助客戶找貨 配單,誠信可靠! |
詢價 | |||
TLC(競沃) |
2447 |
SMD |
115000 |
1000個/圓盤一級代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨, |
詢價 |