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SCT070H120G3AG中文資料意法半導(dǎo)體數(shù)據(jù)手冊PDF規(guī)格書

SCT070H120G3AG
廠商型號

SCT070H120G3AG

功能描述

Automotive-grade silicon carbide Power MOSFET 1200 V, 63 mΩ typ., 30 A in an H2PAK-7 package

絲印標識

70H120G3AG

封裝外殼

H2PAK-7

文件大小

396.48 Kbytes

頁面數(shù)量

14

生產(chǎn)廠商 STMicroelectronics
企業(yè)簡稱

STMICROELECTRONICS意法半導(dǎo)體

中文名稱

意法半導(dǎo)體集團官網(wǎng)

原廠標識
數(shù)據(jù)手冊

下載地址一下載地址二到原廠下載

更新時間

2025-2-3 11:10:00

SCT070H120G3AG規(guī)格書詳情

Features

? AEC-Q101 qualified

? Very low RDS(on) over the entire temperature range

? High speed switching performances

? Very fast and robust intrinsic body diode

? Source sensing pin for increased efficiency

Applications

? Main inverter (electric traction)

? DC/DC converter for EV/HEV

? On board charger (OBC)

Description

This silicon carbide Power MOSFET device has been developed using ST’s

advanced and innovative 3rd generation SiC MOSFET technology. The device

features a very low RDS(on) over the entire temperature range combined with

low capacitances and very high switching operations, which improve application

performance in frequency, energy efficiency, system size and weight reduction.

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