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SCT070H120G3AG中文資料意法半導(dǎo)體數(shù)據(jù)手冊PDF規(guī)格書
廠商型號 |
SCT070H120G3AG |
功能描述 | Automotive-grade silicon carbide Power MOSFET 1200 V, 63 mΩ typ., 30 A in an H2PAK-7 package |
文件大小 |
396.48 Kbytes |
頁面數(shù)量 |
14 頁 |
生產(chǎn)廠商 | STMicroelectronics |
企業(yè)簡稱 |
STMICROELECTRONICS【意法半導(dǎo)體】 |
中文名稱 | 意法半導(dǎo)體集團(tuán)官網(wǎng) |
原廠標(biāo)識 | |
數(shù)據(jù)手冊 | |
更新時間 | 2025-1-3 18:30:00 |
SCT070H120G3AG規(guī)格書詳情
Features
? AEC-Q101 qualified
? Very low RDS(on) over the entire temperature range
? High speed switching performances
? Very fast and robust intrinsic body diode
? Source sensing pin for increased efficiency
Applications
? Main inverter (electric traction)
? DC/DC converter for EV/HEV
? On board charger (OBC)
Description
This silicon carbide Power MOSFET device has been developed using ST’s
advanced and innovative 3rd generation SiC MOSFET technology. The device
features a very low RDS(on) over the entire temperature range combined with
low capacitances and very high switching operations, which improve application
performance in frequency, energy efficiency, system size and weight reduction.
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