SCT20N120中文資料意法半導(dǎo)體數(shù)據(jù)手冊PDF規(guī)格書
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SCT20N120規(guī)格書詳情
Description
This silicon carbide Power MOSFET is produced exploiting the advanced, innovative properties of wide bandgap materials. This results in unsurpassed on-resistance per unit area and very good switching performance almost independent of temperature. The outstanding thermal properties of the SiC material, combined with the device’s housing in the proprietary HiP247? package, allows designers to use an industrystandard outline with significantly improved thermal capability. These features render the device perfectly suitable for high-efficiency and high power density applications.
Features
? Very tight variation of on-resistance vs. temperature
? Slight variation of switching losses vs. temperature
? Very high operating temperature capability (200 °C)
? Very fast and robust intrinsic body diode
? Low capacitance
? Easy to drive
Applications
? Solar inverters, UPS
? Motor drives
? High voltage DC-DC converters
? Switch mode power supplies
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
ST(意法) |
23+ |
NA/ |
8735 |
原廠直銷,現(xiàn)貨供應(yīng),賬期支持! |
詢價 | ||
ST |
21+ |
TO-247-3 |
3400 |
一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力 |
詢價 | ||
ST |
22+ |
TO2473 |
9000 |
原廠渠道,現(xiàn)貨配單 |
詢價 | ||
STMicroelectronics |
24+ |
HiP247? |
30000 |
晶體管-分立半導(dǎo)體產(chǎn)品-原裝正品 |
詢價 | ||
ST(意法半導(dǎo)體) |
20+ |
HiP-247 |
30 |
詢價 | |||
ST/意法半導(dǎo)體 |
21+ |
HiP-247-3 |
8860 |
原裝現(xiàn)貨,實單價優(yōu) |
詢價 | ||
ST |
T0247 |
899933 |
集團化配單-有更多數(shù)量-免費送樣-原包裝正品現(xiàn)貨-正規(guī) |
詢價 | |||
ST |
22+ |
TO-247 |
25000 |
原廠原裝,價格優(yōu)勢!13246658303 |
詢價 | ||
ST |
589220 |
16余年資質(zhì) 絕對原盒原盤 更多數(shù)量 |
詢價 | ||||
ST/意法半導(dǎo)體 |
21+ |
HiP-247-3 |
8860 |
只做原裝,質(zhì)量保證 |
詢價 |
