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SCT20N120

Very high operating temperature capability

Description ThissiliconcarbidePowerMOSFETisproducedexploitingtheadvanced,innovativepropertiesofwidebandgapmaterials.Thisresultsinunsurpassedon-resistanceperunitareaandverygoodswitchingperformancealmostindependentoftemperature.Theoutstandingthermalpropertiesof

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體集團

SCT20N120H

SiC N-Channel MOSFET

FEATURES ·HighBlockingVoltagewithLowOn-Resistance ·HighSpeedSwitchingwithLowCapacitances ·EasytoParallelandSimpletoDrive ·AvalancheRuggedness APPLICATIONS ·SolarInverters ·SwitchModePowerSupplies ·High-voltageDC/DCConverters ·Motordrives

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

SCT20N120AG

Automotive-grade silicon carbide Power MOSFET 1200 V, 20 A, 189 m廓 (typ., TJ=150 ?C), in an HiP247 package

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體集團

20N120C

Generalpurposeinverters

JSMCJILIN SINO-MICROELECTRONICS CO., LTD.

華微電子吉林華微電子股份有限公司

BRG20N120D

Insulated-GateBipolarTransistorinaTO-3PPlasticPackage

FOSHANFoshan Blue Rocket Electronics Co.,Ltd.

藍箭電子佛山市藍箭電子股份有限公司

FGA20N120FTD

1200V,20ATrenchIGBT

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

FGA20N120FTDTU

1200V,20ATrenchIGBT

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

G20N120

34A,1200VN-ChannelIGBT

Description TheHGTG20N120E2isaMOSgated,highvoltageswitchingdevicecombiningthebestfeaturesofMOSFETsandbipolartransistors.ThedevicehasthehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedropvari

Intersil

Intersil Corporation

G20N120

63A,1200V,NPTSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiode

63A,1200V,NPTSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiode TheHGTG20N120CNDisaNon-PunchThrough(NPT)IGBTdesign.ThisisanewmemberoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.Thisdevicehas

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

G20N120

63A,1200V,NPTSeriesN-ChannelIGBT

63A,1200V,NPTSeriesN-ChannelIGBT TheHGTG20N120CNisaNon-PunchThrough(NPT)IGBTdesign.ThisisanewmemberoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETa

Intersil

Intersil Corporation

G20N120

45A,1200V,UFSSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiode

45A,1200V,UFSSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiode TheHGTG20N120C3DisaMOSgatedhighvoltageswitchingdevicecombiningthebestfeaturesofMOSFETs andbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelowon-stateconductionlos

Intersil

Intersil Corporation

G20N120

63A,1200V,NPTSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiode

63A,1200V,NPTSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiode TheHGTG20N120CNDisaNon-PunchThrough(NPT)IGBTdesign.ThisisanewmemberoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.Thisdevicehas

Intersil

Intersil Corporation

HGH20N120A

N-ChannelEnhancementInsulatedGateBipolarTransistor

Features ?Lowsaturationvoltage,Vce(on)(typ)=2.3V@Vge=15V ?Highinputimpedance ?Fieldstoptrenchtechnologyoffersuperior conductionandswitchingperformances, ?Highspeedswitching Applications ?InductionheatingandMicrowaveoven ?Softswitchingapplications

HuashanSHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD

華汕電子器件汕頭華汕電子器件有限公司

HGTG20N120

34A,1200VN-ChannelIGBT

Description TheHGTG20N120E2isaMOSgated,highvoltageswitchingdevicecombiningthebestfeaturesofMOSFETsandbipolartransistors.ThedevicehasthehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedropvari

Intersil

Intersil Corporation

HGTG20N120CN

63A,1200V,NPTSeriesN-ChannelIGBT

63A,1200V,NPTSeriesN-ChannelIGBT TheHGTG20N120CNisaNon-PunchThrough(NPT)IGBTdesign.ThisisanewmemberoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETa

Intersil

Intersil Corporation

HGTG20N120CND

63A,1200V,NPTSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiode

63A,1200V,NPTSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiode TheHGTG20N120CNDisaNon-PunchThrough(NPT)IGBTdesign.ThisisanewmemberoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.Thisdevicehas

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

HGTG20N120CND

63A,1200V,NPTSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiode

63A,1200V,NPTSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiode TheHGTG20N120CNDisaNon-PunchThrough(NPT)IGBTdesign.ThisisanewmemberoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.Thisdevicehas

Intersil

Intersil Corporation

HM20N120AB

KEDAPTIGBTsofferlowerlossesandhigherenergyefficiencyforapplication

HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd

華之美半導體深圳市華之美半導體有限公司

HM20N120T

H&MNPTIGBTsofferlowerlossesandhigherenergy

HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd

華之美半導體深圳市華之美半導體有限公司

HM20N120TB

KEDAPTIGBTsofferlowerlossesandhigherenergyefficiencyforapplication

HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd

華之美半導體深圳市華之美半導體有限公司

供應商型號品牌批號封裝庫存備注價格
ST
23+
HIP247
100000
全新原裝
 詢價
STMicroelectronics
24+
HiP247?
30000
晶體管-分立半導體產(chǎn)品-原裝正品
 詢價
ST/意法半導體
22+
HiP-247-3
6003
原裝正品現(xiàn)貨 可開增值稅發(fā)票
 詢價
ST(意法半導體)
23+
HiP-247
7814
支持大陸交貨,美金交易。原裝現(xiàn)貨庫存。
 詢價
ST
2024+
N/A
70000
柒號只做原裝 現(xiàn)貨價秒殺全網(wǎng)
 詢價
ST
1651+
?
14860
只做原裝進口,假一罰十
 詢價
ST(意法半導體)
2112+
HiP-247
105000
30個/管一級代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨,長期
 詢價
STM
1809+
HiP247?
326
就找我吧!--邀您體驗愉快問購元件!
 詢價
ST/意法半導體
21+
HiP-247-3
8800
公司只做原裝正品
 詢價
ST(意法)
23+
NA
20094
正納10年以上分銷經(jīng)驗原裝進口正品做服務做口碑有支持
 詢價
更多SCT20N120供應商 更新時間2024-11-28 16:20:00

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