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SDS065J050H3

Marking:DS065050H3;Package:TO-247-2L;3 rd Generation 65 0V/ 50A SiC Schottky Barrier Diode

RevolutionarysemiconductormaterialSiliconCarbide(SiC) Noreverserecovery Highspeedswitchingperformance Temperatureindependentswitchingbehavior Systemcost/sizesavingsduetoreducedcoolingrequirements Junctiontemperaturerangefrom55to175 RoHScompliant

SANANSanan Optoelectronics Co., Ltd

三安光電三安光電股份有限公司

SDS1000

super- economical type digital storage oscilloscope

+Bandwidth:20MHz-200MHz +2-Channel +Samplerate:100MS/s-1GS/s +Ultra-thinbody +7inchhighresolutionLCD +SCPI,andLabVIEWsupported

ETCList of Unclassifed Manufacturers

未分類制造商

SDS1022

super- economical type digital storage oscilloscope

+Bandwidth:20MHz-200MHz +2-Channel +Samplerate:100MS/s-1GS/s +Ultra-thinbody +7inchhighresolutionLCD +SCPI,andLabVIEWsupported

ETCList of Unclassifed Manufacturers

未分類制造商

SDS1052

super- economical type digital storage oscilloscope

+Bandwidth:20MHz-200MHz +2-Channel +Samplerate:100MS/s-1GS/s +Ultra-thinbody +7inchhighresolutionLCD +SCPI,andLabVIEWsupported

ETCList of Unclassifed Manufacturers

未分類制造商

SDS1102

super- economical type digital storage oscilloscope

+Bandwidth:20MHz-200MHz +2-Channel +Samplerate:100MS/s-1GS/s +Ultra-thinbody +7inchhighresolutionLCD +SCPI,andLabVIEWsupported

ETCList of Unclassifed Manufacturers

未分類制造商

SDS1202

super- economical type digital storage oscilloscope

+Bandwidth:20MHz-200MHz +2-Channel +Samplerate:100MS/s-1GS/s +Ultra-thinbody +7inchhighresolutionLCD +SCPI,andLabVIEWsupported

ETCList of Unclassifed Manufacturers

未分類制造商

SDS120J002B3

3 rd Generation 1200V/2A SiC Schottky Barrier Diode

RevolutionarysemiconductormaterialSiliconCarbide(SiC) Noreverserecovery Highspeedswitchingperformance Temperatureindependentswitchingbehavior Systemcost/sizesavingsduetoreducedcoolingrequirements Junctiontemperaturerangefrom55to175 RoHScompliant

SANANSanan Optoelectronics Co., Ltd

三安光電三安光電股份有限公司

SDS120J002C3

Marking:DS120002C3;Package:TO-220-2L;3 rd Generation 1200V/2A SiC Schottky Barrier Diode

RevolutionarysemiconductormaterialSiliconCarbide(SiC) Noreverserecovery Highspeedswitchingperformance Temperatureindependentswitchingbehavior Systemcost/sizesavingsduetoreducedcoolingrequirements Junctiontemperaturerangefrom55to175 RoHScompliant

SANANSanan Optoelectronics Co., Ltd

三安光電三安光電股份有限公司

SDS120J002D3

Marking:DS120002D3;Package:TO-252-2L;3 rd Generation 1200V/2A SiC Schottky Barrier Diode

RevolutionarysemiconductormaterialSiliconCarbide(SiC Noreverserecovery Highspeedswitchingperformance Temperatureindependentswitchingbehavior Systemcost/sizesavingsduetoreducedcoolingrequirements Junctiontemperaturerangefrom55to175 RoHScompliant

SANANSanan Optoelectronics Co., Ltd

三安光電三安光電股份有限公司

SDS120J003B3

3rd Generation 1200V/3A SiC Schottky Barrier Diode

RevolutionarysemiconductormaterialSiliconCarbide(SiC) Noreverserecovery Highspeedswitchingperformance Temperatureindependentswitchingbehavior Systemcost/sizesavingsduetoreducedcoolingrequirements Junctiontemperaturerangefrom55to175 RoHScompliant

SANANSanan Optoelectronics Co., Ltd

三安光電三安光電股份有限公司

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更多SDS供應(yīng)商 更新時(shí)間2025-4-7 9:01:00