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SDS120J010H3

Marking：DS12000H3；Package：TO-247-2L；3rd Generation 1200V/10A SiC Schottky Barrier Diode

RevolutionarysemiconductormaterialSiliconCarbide(SiC) Noreverserecovery Highspeedswitchingperformance Temperatureindependentswitchingbehavior Systemcost/sizesavingsduetoreducedcoolingrequirements Junctiontemperaturerangefrom55to175 RoHScompliant

SANANSanan Optoelectronics Co., Ltd

三安光電三安光電股份有限公司

SDS120J015B3

3rd Generation 1200V/15A SiC Schottky Barrier Diode

RevolutionarysemiconductormaterialSiliconCarbide(SiC) Noreverserecovery Highspeedswitchingperformance Temperatureindependentswitchingbehavior Systemcost/sizesavingsduetoreducedcoolingrequirements Junctiontemperaturerangefrom55to175 RoHScompliant

SANANSanan Optoelectronics Co., Ltd

三安光電三安光電股份有限公司

SDS120J015C3

Marking：DS120015C3；Package：TO-220-2L；3rd Generation 1200V/15A SiC Schottky Barrier Diode

RevolutionarysemiconductormaterialSiliconCarbide(SiC) Noreverserecovery Highspeedswitchingperformance Temperatureindependentswitchingbehavior Systemcost/sizesavingsduetoreducedcoolingrequirements Junctiontemperaturerangefrom55to175 RoHScompliant

SANANSanan Optoelectronics Co., Ltd

三安光電三安光電股份有限公司

SDS120J015H3

Marking：DS120015H3；Package：TO-247-2L；3rd Generation 1200V/15A SiC Schottky Barrier Diode

RevolutionarysemiconductormaterialSiliconCarbide(SiC) Noreverserecovery Highspeedswitchingperformance Temperatureindependentswitchingbehavior Systemcost/sizesavingsduetoreducedcoolingrequirements Junctiontemperaturerangefrom55to175 RoHScompliant

SANANSanan Optoelectronics Co., Ltd

三安光電三安光電股份有限公司

SDS120J015H5

Marking：DS120015H5；Package：TO-247-2L；5th Generation 1200V/15A SiC Schottky Barrier Diode

Revolutionarysemiconductormaterial-SiliconCarbide(SiC) Noreverserecovery High-speedswitchingperformance Temperature-independentswitchingbehavior Systemcost/sizesavingsduetoreducedcoolingrequirements Junctiontemperaturerangefrom-55℃to175℃ RoHScompliant

SANANSanan Optoelectronics Co., Ltd

三安光電三安光電股份有限公司

SDS120J020B3

3rd Generation 1200V/20A SiC Schottky Barrier Diode

RevolutionarysemiconductormaterialSiliconCarbide(SiC) Noreverserecovery Highspeedswitchingperformance Temperatureindependentswitchingbehavior Systemcost/sizesavingsduetoreducedcoolingrequirements Junctiontemperaturerangefrom55to175 RoHScompliant

SANANSanan Optoelectronics Co., Ltd

三安光電三安光電股份有限公司

SDS120J020G3

Marking：DS120020G3；Package：TO-247-3L；3rd Generation 1200V/20A SiC Schottky Barrier Diode

RevolutionarysemiconductormaterialSiliconCarbide(SiC) Noreverserecovery Highspeedswitchingperformance Temperatureindependentswitchingbehavior Systemcost/sizesavingsduetoreducedcoolingrequirements Junctiontemperaturerangefrom55to175 RoHScompliant

SANANSanan Optoelectronics Co., Ltd

三安光電三安光電股份有限公司

SDS120J020H3

Marking：DS120020H3；Package：TO-247-2L；3rd Generation 1200V/20A SiC Schottky Barrier Diode

RevolutionarysemiconductormaterialSiliconCarbide(SiC) Noreverserecovery Highspeedswitchingperformance Temperatureindependentswitchingbehavior Systemcost/sizesavingsduetoreducedcoolingrequirements Junctiontemperaturerangefrom55to175 RoHScompliant

SANANSanan Optoelectronics Co., Ltd

三安光電三安光電股份有限公司

SDS120J020H5

Marking：DS120020H5；Package：TO-247-2L；5th Generation 1200V/20A SiC Schottky Barrier Diode

Revolutionarysemiconductormaterial-SiliconCarbide(SiC) Noreverserecovery High-speedswitchingperformance Temperature-independentswitchingbehavior Systemcost/sizesavingsduetoreducedcoolingrequirements Junctiontemperaturerangefrom-55℃to175℃ RoHScompliant

SANANSanan Optoelectronics Co., Ltd

三安光電三安光電股份有限公司

SDS120J027H3

3rd Generation 1200V/2 7 A SiC Schottky Barrier Diode

RevolutionarysemiconductormaterialSiliconCarbide(SiC) Noreverserecovery Highspeedswitchingperformance Temperatureindependentswitchingbehavior Systemcost/sizesavingsduetoreducedcoolingrequirements Junctiontemperaturerangefrom55to175 RoHScompliant

SANANSanan Optoelectronics Co., Ltd

三安光電三安光電股份有限公司

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更多SDS供應(yīng)商 更新時(shí)間2025-4-8 9:00:00

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