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FRE9160D

30A,-100V,0.095Ohm,RadHard,P-ChannelPowerMOSFETs

Description TheIntersilCorporationSectorhasdesignedaseriesofSECONDGENERATIONhardenedpowerMOSFETsofbothNandPchannelenhancementtypeswithratingsfrom100Vto500V,1Ato60A,andonresistanceaslowas25m?.Totaldosehardnessisofferedat100KRAD(Si)and1000KRAD(Si)with

Intersil

Intersil Corporation

FRE9160H

30A,-100V,0.095Ohm,RadHard,P-ChannelPowerMOSFETs

Description TheIntersilCorporationSectorhasdesignedaseriesofSECONDGENERATIONhardenedpowerMOSFETsofbothNandPchannelenhancementtypeswithratingsfrom100Vto500V,1Ato60A,andonresistanceaslowas25m?.Totaldosehardnessisofferedat100KRAD(Si)and1000KRAD(Si)with

Intersil

Intersil Corporation

FRE9160R

30A,-100V,0.095Ohm,RadHard,P-ChannelPowerMOSFETs

Description TheIntersilCorporationSectorhasdesignedaseriesofSECONDGENERATIONhardenedpowerMOSFETsofbothNandPchannelenhancementtypeswithratingsfrom100Vto500V,1Ato60A,andonresistanceaslowas25m?.Totaldosehardnessisofferedat100KRAD(Si)and1000KRAD(Si)with

Intersil

Intersil Corporation

FRK9160D

40A,-100V,0.085Ohm,RadHard,P-ChannelPowerMOSFETs

Description TheHarrisSemiconductorSectorhasdesignedaseriesofSECONDGENERATIONhardenedpowerMOSFETsofbothNandPchannelenhancementtypeswithratingsfrom100Vto500V,1Ato60A,andonresistanceaslowas25m?.Totaldosehardnessisofferedat100KRAD(Si)and1000KRAD(Si)with

Intersil

Intersil Corporation

FRK9160H

40A,-100V,0.085Ohm,RadHard,P-ChannelPowerMOSFETs

Description TheHarrisSemiconductorSectorhasdesignedaseriesofSECONDGENERATIONhardenedpowerMOSFETsofbothNandPchannelenhancementtypeswithratingsfrom100Vto500V,1Ato60A,andonresistanceaslowas25m?.Totaldosehardnessisofferedat100KRAD(Si)and1000KRAD(Si)with

Intersil

Intersil Corporation

FRK9160R

40A,-100V,0.085Ohm,RadHard,P-ChannelPowerMOSFETs

Description TheHarrisSemiconductorSectorhasdesignedaseriesofSECONDGENERATIONhardenedpowerMOSFETsofbothNandPchannelenhancementtypeswithratingsfrom100Vto500V,1Ato60A,andonresistanceaslowas25m?.Totaldosehardnessisofferedat100KRAD(Si)and1000KRAD(Si)with

Intersil

Intersil Corporation

FSJ9160

44A,-100V,0.055Ohm,RadHard,SEGRResistant,P-ChannelPowerMOSFETs

Description TheDiscreteProductsOperationofIntersilCorporationhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inpartic

Intersil

Intersil Corporation

FSJ9160D

44A,-100V,0.055Ohm,RadHard,SEGRResistant,P-ChannelPowerMOSFETs

Description TheDiscreteProductsOperationofIntersilCorporationhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inpartic

Intersil

Intersil Corporation

FSJ9160R

44A,-100V,0.055Ohm,RadHard,SEGRResistant,P-ChannelPowerMOSFETs

Description TheDiscreteProductsOperationofIntersilCorporationhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inpartic

Intersil

Intersil Corporation

FSYC9160D

RadiationHardened,SEGRResistantP-ChannelPowerMOSFETs

Description TheDiscreteProductsOperationofIntersilhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticular,iscombi

Intersil

Intersil Corporation

詳細(xì)參數(shù)

  • 型號(hào)：

    SFFD9160P

  • 制造商：

    SSDI

  • 制造商全稱(chēng)：

    Solid States Devices, Inc

  • 功能描述：

    RADIATION HARDENED P-CHANNEL MOSFET

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更多SFFD9160P供應(yīng)商 更新時(shí)間2025-5-8 10:01:00

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