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SHB110

2SATA-150withRAID0,1

AXIOMTEKAxiomtek Co., Ltd.

艾訊科技艾訊股份有限公司

SIA110DJ

N-Channel100V(D-S)MOSFET

FEATURES ?TrenchFET?GenIVpowerMOSFET ?TunedforthelowestRDS-Qoss ?100RgandUIStested ?Materialcategorization:? fordefinitionsofcompliancepleasesee www.vishay.com/doc?99912 APPLICATIONS ?Primarysideswitch ?DC/DCconverter ?Motordriveswitch ?Boostconverter

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

SIHFD110

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. The4pinDIPpackageisalowcostmachine-insertablecasestylewhichcanbestackedinmultiplecombinat

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

SIHFL110

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. FEATURES ?SurfaceMount ?AvailableinTapeandReel ?DynamicdV/dtRating ?Repetitive

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

SIHFL110T

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. FEATURES ?SurfaceMount ?AvailableinTapeandReel ?DynamicdV/dtRating ?Repetitive

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

SIHFR110

PowerMOSFET

DESCRIPTION ThirdgenerationpowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Power

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

SIHFR110

DynamicdV/dtRatingRepetitiveAvalancheRated

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thest

KERSEMI

Kersemi Electronic Co., Ltd.

SIHFR110

PowerMOSFET

FEATURES ?DynamicdV/dtrating ?Repetitiveavalancherated ?Surface-mount(IRFR110,SiHFR110) ?Availableintapeandreel ?Fastswitching ?Easeofparalleling ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 DESCRIPTION Thirdgeneration

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

SIHFR110T

PowerMOSFET

DESCRIPTION ThirdgenerationpowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Power

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

SIHFR110T

DynamicdV/dtRatingRepetitiveAvalancheRated

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thest

KERSEMI

Kersemi Electronic Co., Ltd.

晶體管資料

  • 型號(hào):

    SGS110

  • 別名:

    三極管、晶體管、晶體三極管

  • 生產(chǎn)廠家:

  • 制作材料:

    Si-N+Darl+Di

  • 性質(zhì):

    低頻或音頻放大 (LF)_開(kāi)關(guān)管 (S)_功率放大 (L

  • 封裝形式:

    直插封裝

  • 極限工作電壓:

    60V

  • 最大電流允許值:

    4A

  • 最大工作頻率:

    <1MHZ或未知

  • 引腳數(shù):

    3

  • 可代換的型號(hào):

    TIP110,

  • 最大耗散功率:

    50W

  • 放大倍數(shù):

    β>1000

  • 圖片代號(hào):

    B-21

  • vtest:

    60

  • htest:

    999900

  • atest:

    4

  • wtest:

    50

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
JD/晶導(dǎo)
23+
SMA(DO-214AC)
69820
終端可以免費(fèi)供樣,支持BOM配單!
詢價(jià)
ST/意法
22+
TO-126
20000
保證原裝正品,假一陪十
詢價(jià)
ST
TO-126
22+
6000
十年配單,只做原裝
詢價(jià)
ST/意法
23+
TO-126
11200
原廠授權(quán)一級(jí)代理、全球訂貨優(yōu)勢(shì)渠道、可提供一站式BO
詢價(jià)
ST
23+
TO-126
16900
正規(guī)渠道,只有原裝!
詢價(jià)
ST/意法
22+
TO-126
100000
代理渠道/只做原裝/可含稅
詢價(jià)
ST
22+
TO-126
25000
只做原裝進(jìn)口現(xiàn)貨,專(zhuān)注配單
詢價(jià)
ST
23+
TO-126
8560
受權(quán)代理!全新原裝現(xiàn)貨特價(jià)熱賣(mài)!
詢價(jià)
ST
22+
TO-126
25000
只做原裝進(jìn)口現(xiàn)貨,專(zhuān)注配單
詢價(jià)
ST/意法
22+
TO-126
95384
詢價(jià)
更多SGS110供應(yīng)商 更新時(shí)間2025-4-12 11:00:00