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首頁>SI3483DV-T1-E3>芯片詳情
SI3483DV-T1-E3_VISHAY/威世科技_MOSFET 30V 6.2A 2.0W 35mohm @ 10V博浩通科技
- 詳細(xì)信息
- 規(guī)格書下載
產(chǎn)品屬性
- 類型
描述
- 型號(hào):
SI3483DV-T1-E3
- 功能描述:
MOSFET 30V 6.2A 2.0W 35mohm @ 10V
- RoHS:
否
- 制造商:
STMicroelectronics
- 晶體管極性:
N-Channel
- 汲極/源極擊穿電壓:
650 V
- 閘/源擊穿電壓:
25 V
- 漏極連續(xù)電流:
130 A 電阻汲極/源極
- RDS(導(dǎo)通):
0.014 Ohms
- 配置:
Single
- 安裝風(fēng)格:
Through Hole
- 封裝/箱體:
Max247
- 封裝:
Tube
供應(yīng)商
- 企業(yè):
深圳市博浩通科技有限公司
- 商鋪:
- 聯(lián)系人:
王先生/羅小姐
- 手機(jī):
13798567707
- 詢價(jià):
- 電話:
0755-82818091
- 傳真:
0755-82818458
- 地址:
國(guó)內(nèi)業(yè)務(wù):深圳市福田區(qū)華強(qiáng)北寶華大廈A座808,國(guó)際業(yè)務(wù):深圳市福田區(qū)華強(qiáng)北路賽格廣場(chǎng)3510A室(微信號(hào):sz8910)
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