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SI4435DDY

P-Channel 30-V (D-S) MOSFET

FEATURES ?Halogen-freeAccordingtoIEC61249-2-21Definition ?TrenchFET?PowerMOSFET ?ComplianttoRoHSDirective2002/95/EC APPLICATIONS ?LoadSwitches ?BatterySwitch

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

SI4435DDY

P-Channel 30-V (D-S) MOSFET

FEATURES ?Halogen-freeAccordingtoIEC61249-2-21Definition ?TrenchFET?PowerMOSFET ?ComplianttoRoHSDirective2002/95/EC APPLICATIONS ?LoadSwitches ?BatterySwitch

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

SI4435DDY

P-Channel MOSFET uses advanced trench technology

DOINGTERSHENZHEN DOINGTER SEMICONDUCTOR CO., LTD

杜因特深圳市杜因特半導(dǎo)體有限公司

Si4435DDY

P-Channel 30-V (D-S) MOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

SI4435DDY-T1-GE3

P-Channel 30-V (D-S) MOSFET

FEATURES ?Halogen-freeAccordingtoIEC61249-2-21Definition ?TrenchFET?PowerMOSFET ?ComplianttoRoHSDirective2002/95/EC APPLICATIONS ?LoadSwitches ?BatterySwitch

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

SI4435DDY_17

P-Channel 30-V (D-S) MOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

SI4435DDY_V01

P-Channel 30 V (D-S) MOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

SI4435DDY-T1-E3

P-Channel 30-V (D-S) MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體(臺(tái)灣)有限公司

SI4435DDY-T1-E3

P-Channel 30 V (D-S) MOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

SI4435DDY-T1-GE3

P-Channel 30 V (D-S) MOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

SI4435DY

30VP-ChannelPowerTrenchMOSFET

GeneralDescription ThisP-ChannelMOSFETisaruggedgateversionofFairchildSemiconductor’sadvancedPowerTrenchprocess.Ithasbeenoptimizedforpowermanagementapplicationsrequiringawiderangeofgavedrivevoltageratings(4.5V–25V). Features ?–8.8A,–30VRDS(ON)=20mΩ@VGS

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

SI4435DY

P-ChannelMOSFET

■Features ●VDS=-30V ●RDS(on)=0.02Ω@VGS=-10V ●RDS(on)=0.035Ω@VGS=-4.5V

KEXINGuangdong Kexin Industrial Co.,Ltd

科信電子廣東科信實(shí)業(yè)有限公司

SI4435DY

PowerMOSFET(Vdss=-30V,Rds(on)=0.020ohm

VDSS=-30V RDS(on)=0.020? Description TheseP-channelHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievetheextremelylowon-resistancepersiliconarea.Thisbenefitprovidesthedesignerwithanextremelyefficientdeviceforusei

IRF

International Rectifier

SI4435DY-HF

P-ChannelMOSFET

■Features ●VDS=-30V ●RDS(on)=0.02Ω@VGS=-10V ●RDS(on)=0.035Ω@VGS=-4.5V ●Pb?FreePackageMaybeAvailable.TheG?SuffixDenotesa Pb?FreeLeadFinish

KEXINGuangdong Kexin Industrial Co.,Ltd

科信電子廣東科信實(shí)業(yè)有限公司

SI4435DYPBF

SimpleDriveRequirements

IRF

International Rectifier

SI4435DYPBF

HEXFETPowerMOSFET

VDSS=-30V RDS(on)=0.020? Description TheseP-channelHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievetheextremelylowon-resistancepersiliconarea.Thisbenefitprovidesthedesignerwithanextremelyefficientdeviceforusei

IRF

International Rectifier

SI4435DYTRPBF

UltraLowOn-Resistance

VDSS=-30V RDS(on)=0.020? Description TheseP-channelHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievetheextremelylowon-resistancepersiliconarea.Thisbenefitprovidesthedesignerwithanextremelyefficientdeviceforusei

IRF

International Rectifier

SI4435FDY

P-Channel30V(D-S)MOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

SM4435KC-TRL

P-Channel30-V(D-S)MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體(臺(tái)灣)有限公司

SPP4435

P-ChannelEnhancementModeMOSFET

SYNC-POWERSYNC POWER Crop.

擎力科技擎力科技股份有限公司

詳細(xì)參數(shù)

  • 型號(hào):

    SI4435DDY

  • 制造商:

    VISHAY

  • 制造商全稱:

    Vishay Siliconix

  • 功能描述:

    P-Channel 30-V(D-S) MOSFET

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VISHAY
2021+
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658926
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Vishay(威世)
23+
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10048
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23+
SOP-8
580000
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VISHAY
10+
2200
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Vishay(威世)
2249+
-
60684
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原裝
24+
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37545
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VISHAY/威世
24+
SOP-8
502358
免費(fèi)送樣原盒原包現(xiàn)貨一手渠道聯(lián)系
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VISHAY
2024+
N/A
70000
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VIS
23+
SOP8
35623
原裝正品,假一罰十
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VISHAY
2016+
SOP-8
6523
只做進(jìn)口原裝現(xiàn)貨假一賠十!
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更多SI4435DDY供應(yīng)商 更新時(shí)間2025-1-1 14:00:00