訂購數(shù)量 | 價(jià)格 |
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首頁>Si4840BDY-T1-GE3>芯片詳情
Si4840BDY-T1-GE3_VISHAY/威世科技_MOSFET 40V 19A 6.0W 9.0mohm @ 10V深圳良洲科技
- 詳細(xì)信息
- 規(guī)格書下載
產(chǎn)品屬性
- 類型
描述
- 型號(hào):
Si4840BDY-T1-GE3
- 功能描述:
MOSFET 40V 19A 6.0W 9.0mohm @ 10V
- RoHS:
否
- 制造商:
STMicroelectronics
- 晶體管極性:
N-Channel
- 汲極/源極擊穿電壓:
650 V
- 閘/源擊穿電壓:
25 V
- 漏極連續(xù)電流:
130 A 電阻汲極/源極
- RDS(導(dǎo)通):
0.014 Ohms
- 配置:
Single
- 安裝風(fēng)格:
Through Hole
- 封裝/箱體:
Max247
- 封裝:
Tube
供應(yīng)商
- 企業(yè):
深圳良洲科技有限公司
- 商鋪:
- 聯(lián)系人:
楊夢琪
- 手機(jī):
19128244554
- 詢價(jià):
- 電話:
0755-21010605
- 地址:
深圳市福田區(qū)華強(qiáng)北街道華航社區(qū)華強(qiáng)北路1005、1007、1015號(hào)華強(qiáng)電子世界2號(hào)樓2層22C081
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