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首頁>SI7212DN-T1-GE3>芯片詳情
SI7212DN-T1-GE3_VISHAY/威世科技_MOSFET 30V 6.8A 2.6W 36mohm @ 10V芯狀元科技
- 詳細(xì)信息
- 規(guī)格書下載
原廠料號(hào):SI7212DN-T1-GE3品牌:VISHAY
誠(chéng)信第一!只做原裝,代理/分銷渠道 只做原裝,現(xiàn)貨價(jià)秒殺全網(wǎng),假一賠十,穩(wěn)定供應(yīng)
產(chǎn)品屬性
- 類型
描述
- 型號(hào):
SI7212DN-T1-GE3
- 功能描述:
MOSFET 30V 6.8A 2.6W 36mohm @ 10V
- RoHS:
否
- 制造商:
STMicroelectronics
- 晶體管極性:
N-Channel
- 汲極/源極擊穿電壓:
650 V
- 閘/源擊穿電壓:
25 V
- 漏極連續(xù)電流:
130 A 電阻汲極/源極
- RDS(導(dǎo)通):
0.014 Ohms
- 配置:
Single
- 安裝風(fēng)格:
Through Hole
- 封裝/箱體:
Max247
- 封裝:
Tube
供應(yīng)商
- 企業(yè):
深圳市芯狀元科技有限公司
- 商鋪:
- 聯(lián)系人:
王總
- 手機(jī):
13715198985
- 詢價(jià):
- 電話:
0755-82550713
- 地址:
深圳市福田區(qū)沙頭街道金地社區(qū)沙嘴路117號(hào)椰樹花園5棟1單元402
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