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SIHFP15N60L

Power MOSFET

FEATURES ?SuperfastBodyDiodeEliminatestheNeedfor ??ExternalDiodesinZVSApplications ?LowerGateChargeResultsinSimpleDriveRequirements ?EnhanceddV/dtCapabilitiesOfferImprovedRuggedness ?HigherGateVoltageThresholdOffersImprovedNoiseImmunity ?Lead(Pb)-freeAvai

VishayVishay Siliconix

威世科技威世科技半導體

SIHFP15N60L-E3

Power MOSFET

FEATURES ?SuperfastBodyDiodeEliminatestheNeedfor ??ExternalDiodesinZVSApplications ?LowerGateChargeResultsinSimpleDriveRequirements ?EnhanceddV/dtCapabilitiesOfferImprovedRuggedness ?HigherGateVoltageThresholdOffersImprovedNoiseImmunity ?Lead(Pb)-freeAvai

VishayVishay Siliconix

威世科技威世科技半導體

SIHG15N60E

ESeriesPowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導體

SIHG15N60E

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

SIHP15N60E

ESeriesPowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導體

SIHP15N60E

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

SIHP15N60E

ESeriesPowerMOSFET

FEATURES ?Lowfigure-of-merit(FOM)RonxQg ?Lowinputcapacitance(Ciss) ?Reducedswitchingandconductionlosses ?Ultralowgatecharge(Qg) ?Avalancheenergyrated(UIS) ?Materialcategorization:fordefinitionsofcompliance ??pleaseseewww.vishay.com/doc?99912 APPLICATIONS ?

VishayVishay Siliconix

威世科技威世科技半導體

SKB15N60

FastIGBTinNPT-technologywithsoft,fastrecoveryanti-parallelEmCondiode

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SKB15N60

FastIGBTinNPT-technologywithsoft,fastrecoveryanti-parallelEmCondiode

FastIGBTinNPT-technologywithsoft,fastrecoveryanti-parallelEmCondiode ?75lowerEoffcomparedtopreviousgenerationcombinedwithlowconductionlosses ?Shortcircuitwithstandtime–10μs ?Designedfor: -Motorcontrols -Inverter ?NPT-Technologyfor600Vapplicationso

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SKB15N60HS

HighSpeedIGBTinNPT-technology

?30lowerEoffcomparedtopreviousgeneration ?Shortcircuitwithstandtime–10μs ?Designedforoperationabove30kHz ?NPT-Technologyfor600Vapplicationsoffers: -parallelswitchingcapability -moderateEoffincreasewithtemperature -verytightparameterdistribution

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SKB15N60HS

HighSpeedIGBTinNPT-technology30lowerEoffcomparedtopreviousgeneration

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SKP15N60

FastIGBTinNPT-technologywithsoft,fastrecoveryanti-parallelEmCondiode

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SKP15N60

FastIGBTinNPT-technologywithsoft,fastrecoveryanti-parallelEmCondiode

FastIGBTinNPT-technologywithsoft,fastrecoveryanti-parallelEmCondiode ?75lowerEoffcomparedtopreviousgenerationcombinedwithlowconductionlosses ?Shortcircuitwithstandtime–10μs ?Designedfor: -Motorcontrols -Inverter ?NPT-Technologyfor600Vapplicationso

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SKW15N60

FastIGBTinNPT-technologywithsoft,fastrecoveryanti-parallelEmCondiode

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SKW15N60

FastIGBTinNPT-technologywithsoft,fastrecoveryanti-parallelEmCondiode

FastIGBTinNPT-technologywithsoft,fastrecoveryanti-parallelEmCondiode ?75lowerEoffcomparedtopreviousgenerationcombinedwithlowconductionlosses ?Shortcircuitwithstandtime–10μs ?Designedfor: -Motorcontrols -Inverter ?NPT-Technologyfor600Vapplicationso

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SPA15N60CFD

CoolMOSTMPowerTransistorFeaturesIntrinsicfast-recoverybodydiode

Features ?Intrinsicfast-recoverybodydiode ?Extremelylowreverserecoverycharge ?Ultralowgatecharge ?Extremedv/dtrated ?Highpeakcurrentcapability ?QualifiedaccordingtoJEDECfortargetapplications CoolMOSCFDdesignedfor: ?SoftswitchingPWMStages ?LCD&CRTTV

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SPA15N60CFD

IscN-ChannelMOSFETTransistor

?FEATURES ?WithTO-220Fpackage ?Lowinputcapacitanceandgatecharge ?Lowgateinputresistance ?Reducedswitchingandconductionlosses ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation ?APPLICATIONS ?Switchingapplication

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

SPI15N60CFD

iscN-ChannelMOSFETTransistor

?DESCRITION ?Ultralowgatecharge ?Highpeakcurrentcapability ?FEATURES ?Staticdrain-sourceon-resistance: RDS(on)≤0.33? ?Enhancementmode ?FastSwitchingSpeed ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

SPI15N60CFD

CoolMOSTMPowerTransistorIntrinsicfast-recoverybodydiode

Features ?Intrinsicfast-recoverybodydiode ?Extremelylowreverserecoverycharge ?Ultralowgatecharge ?Extremedv/dtrated ?Highpeakcurrentcapability ?QualifiedaccordingtoJEDECfortargetapplications CoolMOSCFDdesignedfor: ?SoftswitchingPWMStages ?LCD&CRTTV

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SPP15N60CFD

CoolMOSPowerTransistor

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

詳細參數(shù)

  • 型號:

    SIHFP15N60L

  • 制造商:

    VISHAY

  • 制造商全稱:

    Vishay Siliconix

  • 功能描述:

    Power MOSFET

供應商型號品牌批號封裝庫存備注價格
VISHAY/威世
23+
TO-247
10000
公司只做原裝正品
詢價
V
TO-247
22+
6000
十年配單,只做原裝
詢價
ixys
2023+
TO-247
80000
一級代理/分銷渠道價格優(yōu)勢 十年芯程一路只做原裝正品
詢價
VISHAY/威世
2022+
TO-247
30000
進口原裝現(xiàn)貨供應,原裝 假一罰十
詢價
VISHAY/威世
23+
TO-247
11200
原廠授權(quán)一級代理、全球訂貨優(yōu)勢渠道、可提供一站式BO
詢價
V
24+
TO-247
5000
只做原裝公司現(xiàn)貨
詢價
Vishay
24+
TO-247
12300
獨立分銷商 公司只做原裝 誠心經(jīng)營 免費試樣正品保證
詢價
更多SIHFP15N60L供應商 更新時間2024-12-25 14:30:00