首頁 >SIHG15N60E>規(guī)格書列表
零件編號(hào) | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
SIHG15N60E | iscN-Channel MOSFET Transistor | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | |
SIHG15N60E | E Series Power MOSFET | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | |
E Series Power MOSFET | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
E Series Power MOSFET | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
ESeriesPowerMOSFET | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
ESeriesPowerMOSFET FEATURES ?Lowfigure-of-merit(FOM)RonxQg ?Lowinputcapacitance(Ciss) ?Reducedswitchingandconductionlosses ?Ultralowgatecharge(Qg) ?Avalancheenergyrated(UIS) ?Materialcategorization:fordefinitionsofcompliance ??pleaseseewww.vishay.com/doc?99912 APPLICATIONS ? | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
FastIGBTinNPT-technologywithsoft,fastrecoveryanti-parallelEmCondiode | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
FastIGBTinNPT-technologywithsoft,fastrecoveryanti-parallelEmCondiode FastIGBTinNPT-technologywithsoft,fastrecoveryanti-parallelEmCondiode ?75lowerEoffcomparedtopreviousgenerationcombinedwithlowconductionlosses ?Shortcircuitwithstandtime–10μs ?Designedfor: -Motorcontrols -Inverter ?NPT-Technologyfor600Vapplicationso | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
HighSpeedIGBTinNPT-technology ?30lowerEoffcomparedtopreviousgeneration ?Shortcircuitwithstandtime–10μs ?Designedforoperationabove30kHz ?NPT-Technologyfor600Vapplicationsoffers: -parallelswitchingcapability -moderateEoffincreasewithtemperature -verytightparameterdistribution | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
HighSpeedIGBTinNPT-technology30lowerEoffcomparedtopreviousgeneration | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
FastIGBTinNPT-technologywithsoft,fastrecoveryanti-parallelEmCondiode | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
FastIGBTinNPT-technologywithsoft,fastrecoveryanti-parallelEmCondiode FastIGBTinNPT-technologywithsoft,fastrecoveryanti-parallelEmCondiode ?75lowerEoffcomparedtopreviousgenerationcombinedwithlowconductionlosses ?Shortcircuitwithstandtime–10μs ?Designedfor: -Motorcontrols -Inverter ?NPT-Technologyfor600Vapplicationso | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
FastIGBTinNPT-technologywithsoft,fastrecoveryanti-parallelEmCondiode | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
FastIGBTinNPT-technologywithsoft,fastrecoveryanti-parallelEmCondiode FastIGBTinNPT-technologywithsoft,fastrecoveryanti-parallelEmCondiode ?75lowerEoffcomparedtopreviousgenerationcombinedwithlowconductionlosses ?Shortcircuitwithstandtime–10μs ?Designedfor: -Motorcontrols -Inverter ?NPT-Technologyfor600Vapplicationso | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
CoolMOSTMPowerTransistorFeaturesIntrinsicfast-recoverybodydiode Features ?Intrinsicfast-recoverybodydiode ?Extremelylowreverserecoverycharge ?Ultralowgatecharge ?Extremedv/dtrated ?Highpeakcurrentcapability ?QualifiedaccordingtoJEDECfortargetapplications CoolMOSCFDdesignedfor: ?SoftswitchingPWMStages ?LCD&CRTTV | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
IscN-ChannelMOSFETTransistor ?FEATURES ?WithTO-220Fpackage ?Lowinputcapacitanceandgatecharge ?Lowgateinputresistance ?Reducedswitchingandconductionlosses ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation ?APPLICATIONS ?Switchingapplication | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
iscN-ChannelMOSFETTransistor ?DESCRITION ?Ultralowgatecharge ?Highpeakcurrentcapability ?FEATURES ?Staticdrain-sourceon-resistance: RDS(on)≤0.33? ?Enhancementmode ?FastSwitchingSpeed ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
CoolMOSTMPowerTransistorIntrinsicfast-recoverybodydiode Features ?Intrinsicfast-recoverybodydiode ?Extremelylowreverserecoverycharge ?Ultralowgatecharge ?Extremedv/dtrated ?Highpeakcurrentcapability ?QualifiedaccordingtoJEDECfortargetapplications CoolMOSCFDdesignedfor: ?SoftswitchingPWMStages ?LCD&CRTTV | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
CoolMOSPowerTransistor | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon |
供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫存 | 備注 | 價(jià)格 |
---|---|---|---|---|---|---|---|
VISHAY |
20+ |
TO-247 |
1675 |
就找我吧!--邀您體驗(yàn)愉快問購元件! |
詢價(jià) | ||
Vishay Siliconix |
22+ |
TO2473 |
9000 |
原廠渠道,現(xiàn)貨配單 |
詢價(jià) | ||
Vishay Siliconix |
2022+ |
TO-247-3 |
38550 |
全新原裝 支持表配單 中國著名電子元器件獨(dú)立分銷 |
詢價(jià) | ||
VISHAY(威世) |
23+ |
TO247 |
7350 |
現(xiàn)貨供應(yīng),當(dāng)天可交貨!免費(fèi)送樣,原廠技術(shù)支持!!! |
詢價(jià) | ||
VishayVishay |
NEW- |
MOSFETs |
100000 |
Trans MOSFET N-CH 800V 13A Tube |
詢價(jià) | ||
VISHAY/威世 |
23+ |
TO247 |
50000 |
全新原裝正品現(xiàn)貨,支持訂貨 |
詢價(jià) | ||
V |
23+ |
TO-247 |
10000 |
公司只做原裝正品 |
詢價(jià) | ||
VISHAY/威世 |
23+ |
TO247 |
50000 |
全新原裝正品現(xiàn)貨,支持訂貨 |
詢價(jià) | ||
VISHAY/威世 |
21+ |
TO247 |
10000 |
原裝現(xiàn)貨假一罰十 |
詢價(jià) | ||
IR |
21+ |
TO-247 |
9800 |
只做原裝正品假一賠十!正規(guī)渠道訂貨! |
詢價(jià) |
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