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SIHG20N50C

High Peak Current Capability

FEATURES ?Halogen-freeAccordingtoIEC61249-2-21Definition ?LowFigure-of-MeritRonxQg ?100AvalancheTested ?HighPeakCurrentCapability ?dV/dtRuggedness ?ImprovedTrr/Qrr ?ImprovedGateCharge ?HighPowerDissipationsCapability ?ComplianttoRoHSDirective2002/95/EC

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

SIHG20N50C

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=20A@TC=25℃ ·DrainSourceVoltage-VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.27Ω(Max)@VGS=10V DESCRIPTION ·Motordrive ·DC-DCconverter ·Powerswitchandsolenoiddrive

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

SIHG20N50C-E3

Power MOSFET

FEATURES ?Halogen-freeAccordingtoIEC61249-2-21Definition ?LowFigure-of-MeritRonxQg ?100AvalancheTested ?HighPeakCurrentCapability ?dV/dtRuggedness ?ImprovedTrr/Qrr ?ImprovedGateCharge ?HighPowerDissipationsCapability ?ComplianttoRoHSDirective2002/95/EC

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

SIHG20N50E

E Series Power MOSFET

FEATURES ?Lowfigure-of-merit(FOM)RonxQg ?Lowinputcapacitance(Ciss) ?Reducedswitchingandconductionlosses ?Lowgatecharge(Qg) ?Avalancheenergyrated(UIS) ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 APPLICATIONS ?Comput

VishayVishay Siliconix

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SIHG20N50E_V01

E Series Power MOSFET

FEATURES ?Lowfigure-of-merit(FOM)RonxQg ?Lowinputcapacitance(Ciss) ?Reducedswitchingandconductionlosses ?Lowgatecharge(Qg) ?Avalancheenergyrated(UIS) ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 APPLICATIONS ?Comput

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

SiHG20N50C

Power MOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

SIHG20N50C

isc N-Channel MOSFET Transistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

SIHG20N50C_17

Power MOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

SIHG20N50C_V01

Power MOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

SIHG20N50C-E3

Power MOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

SIHG20N50E

E Series Power MOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

SIHG20N50E

iscN-Channel MOSFET Transistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

詳細(xì)參數(shù)

  • 型號(hào):

    SIHG20N50

  • 功能描述:

    MOSFET 560V 20A 292W 270mohm @ 10V

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶體管極性:

    N-Channel

  • 汲極/源極擊穿電壓:

    650 V

  • 閘/源擊穿電壓:

    25 V

  • 漏極連續(xù)電流:

    130 A 電阻汲極/源極

  • RDS(導(dǎo)通):

    0.014 Ohms

  • 配置:

    Single

  • 安裝風(fēng)格:

    Through Hole

  • 封裝/箱體:

    Max247

  • 封裝:

    Tube

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23+
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8176
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23+
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39360
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22+
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3000
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N/A
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ZIPP
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40
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