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SIHP35N60E

E Series Power MOSFET

FEATURES ?Aspecificonresistance(mΩ-cm2)reduction of25 ?Lowfigure-of-merit(FOM)RonxQg ?Lowinputcapacitance(Ciss) ?Reducedswitchingandconductionlosses ?Ultralowgatecharge(Qg) ?Avalancheenergyrated(UIS) ?Materialcategorization:fordefinitionsofcompliance

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

SIHP35N60E

E Series Power MOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

SIHP35N60E_V01

E Series Power MOSFET

FEATURES ?Aspecificonresistance(mΩ-cm2)reduction of25 ?Lowfigure-of-merit(FOM)RonxQg ?Lowinputcapacitance(Ciss) ?Reducedswitchingandconductionlosses ?Ultralowgatecharge(Qg) ?Avalancheenergyrated(UIS) ?Materialcategorization:fordefinitionsofcompliance

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

SIHP35N60EF

EF Series Power MOSFET With Fast Body Diode

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

SIHP35N60EF-GE3

EF Series Power MOSFET With Fast Body Diode

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

35N60A

35A600VN-channelenhancedfieldeffecttransistor

YFWDIODEDONGGUAN YOU FENG WEI ELECTRONICS CO., LTD

佑風(fēng)微電子廣東佑風(fēng)微電子有限公司

DAM35N60F

N-ChannelEnhancementModeMOSFET

DACO

DACO SEMICONDUCTOR CO.,LTD.

DAM35N60H

N-ChannelEnhancementModeMOSFET

DACO

DACO SEMICONDUCTOR CO.,LTD.

FCA35N60

600VN-ChannelMOSFET

Description SuperFET?isFarichild’sproprietary,newgenerationofhighvoltageMOSFETfamilythatisutilizinganadvancedchargebalancemechanismforoutstandinglowon-resistanceandlowergatechargeperformance. Features ?650V@TJ=150°C ?Typ.RDS(on)=0.079? ?Ultralow

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FCA35N60

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=35A@TC=25℃ ·DrainSourceVoltage :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=79mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

FCA35N60

DESIGN/PROCESSCHANGENOTIFICATION

Description SuperFET?IIMOSFETisFairchildSemiconductor?’sfirstgenerationofhighvoltagesuper-junction(SJ)MOSFETfamilythatisutilizingchargebalancetechnologyforoutstandinglowon-resistanceandlowergatechargeperformance.Thisadvancedtechnologyistailoredtominimizeconducti

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FCH35N60

N-ChannelSuperFET?MOSFET

Description SuperFET?MOSFETisFairchildSemiconductor?’sfirstgenerationofhighvoltagesuper-junction(SJ)MOSFETfamilythatisutilizingchargebalancetechnologyforoutstandinglowon-resistanceandlowergatechargeperformance.Thistechnologyistailoredtominimizeconductionloss,

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FCH35N60

DESIGN/PROCESSCHANGENOTIFICATION

Description SuperFET?IIMOSFETisFairchildSemiconductor?’sfirstgenerationofhighvoltagesuper-junction(SJ)MOSFETfamilythatisutilizingchargebalancetechnologyforoutstandinglowon-resistanceandlowergatechargeperformance.Thisadvancedtechnologyistailoredtominimizeconducti

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FGW35N60H

DiscreteIGBT(High-SpeedVseries)600V/35A

Features Lowpowerloss Lowswitchingsurgeandnoise Highreliability,highruggedness(RBSOA,SCSOAetc.) Applications Uninterruptiblepowersupply Powercoditionner Powerfactorcorrectioncircuit

FujiFuji Electric

富士電機(jī)富士電機(jī)株式會社

FGW35N60HD

DiscreteIGBT(High-SpeedVseries)600V/35A

600V/35A Features Lowpowerloss Lowswitchingsurgeandnoise Highreliability,highruggedness(RBSOA,SCSOAetc.) Applications Uninterruptiblepowersupply Powercoditionner Powerfactorcorrectioncircuit

FujiFuji Electric

富士電機(jī)富士電機(jī)株式會社

ICE35N60W

N-ChannelEnhancementModeMOSFET

ICEMOS

Icemos Technology

ICE35N60W

N-ChannelEnhancementModeMOSFET

MICROSS

Micross Components

ISPW35N60CFD

N-ChannelMOSFETTransistor

?DESCRITION ?Highpeakcurrentcapability ?FEATURES ?Staticdrain-sourceon-resistance: RDS(on)≤118m? ?Enhancementmode: ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IXDH35N60B

IGBTwithoptionalDiode

HighSpeed,LowSaturationVoltage Features ●NPTIGBTtechnology ●lowswitchinglosses ●lowtailcurrent ●nolatchup ●shortcircuitcapability ●positivetemperaturecoefficientforeasyparalleling ●MOSinput,voltagecontrolled ●optionalultrafastdiode ●Internationalstandard

IXYS

IXYS Corporation

IXDP35N60B

IGBTwithoptionalDiode

HighSpeed,LowSaturationVoltage Features ●NPTIGBTtechnology ●lowswitchinglosses ●lowtailcurrent ●nolatchup ●shortcircuitcapability ●positivetemperaturecoefficientforeasyparalleling ●MOSinput,voltagecontrolled ●optionalultrafastdiode ●Internationalstandard

IXYS

IXYS Corporation

供應(yīng)商型號品牌批號封裝庫存備注價(jià)格
vishay原裝
22+23+
TO-220
22521
絕對原裝正品全新進(jìn)口深圳現(xiàn)貨
 詢價(jià)
vishay原裝
19+
TO-220
9860
一級代理
 詢價(jià)
vishay
23+
TO-220
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價(jià)
vishay
13+
TO-220
253
一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力
 詢價(jià)
vishay
24+
TO-220
253
只做原裝進(jìn)口!正品支持實(shí)單!
 詢價(jià)
VISHAY/威世
2021+
SMD
100500
一級代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨,長期排單到貨
 詢價(jià)
VISHAY
20+
TO-220
375
就找我吧!--邀您體驗(yàn)愉快問購元件!
 詢價(jià)
Vishay Siliconix
22+
TO2203
9000
原廠渠道,現(xiàn)貨配單
 詢價(jià)
VISHAY/威世
23+
SMD
11200
原廠授權(quán)一級代理、全球訂貨優(yōu)勢渠道、可提供一站式BO
 詢價(jià)
Vishay Siliconix
2022+
TO-220-3
38550
全新原裝 支持表配單 中國著名電子元器件獨(dú)立分銷
 詢價(jià)
更多SIHP35N60E供應(yīng)商 更新時(shí)間2024-12-25 10:29:00

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