零件編號 | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
SPB10N10L | SIPMOS Power-Transistor | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | |
SIPMOSPowerTransistor Features ?Nchannel ?Enhancementmode ?Avalancherated ?dv/dtrated | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
SIPMOSPower-Transistor | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
SIPMOSPower-Transistor | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
SIPMOSPower-Transistor | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
N-Channel100-V(D-S)MOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導體微碧半導體(臺灣)有限公司 | VBSEMI | ||
N-Channel100-V(D-S)MOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導體微碧半導體(臺灣)有限公司 | VBSEMI | ||
SIPMOSPower-Transistor | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
SIPMOSPowerTransistor Features ?Nchannel ?Enhancementmode ?Avalancherated ?dv/dtrated | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
StarMOSTPowerMOSFET | Good-Ark GOOD-ARK Electronics | Good-Ark | ||
N-ChEnhancementModePowerMOSFET | SECOSSeCoS Halbleitertechnologie GmbH 喜可士喜可士股份有限公司 | SECOS | ||
N-Channel100V(D-S)MOSFET FEATURES ?Halogen-freeAccordingtoIEC61249-2-21 Definition ?ExtremelyLowQgdforSwitchingLosses ?100RgTested ?100AvalancheTested ?ComplianttoRoHSDirective2002/95/EC APPLICATIONS ?PrimarySideSwitch | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導體微碧半導體(臺灣)有限公司 | VBSEMI | ||
N-ChannelMOSFETusesadvancedtrenchtechnology | DOINGTERSHENZHEN DOINGTER SEMICONDUCTOR CO., LTD 杜因特深圳市杜因特半導體有限公司 | DOINGTER | ||
N-ChannelEnhancementModePowerMOSFET | SECOSSeCoS Halbleitertechnologie GmbH 喜可士喜可士股份有限公司 | SECOS | ||
SuperhighdensecelldesignforlowRDS(ON). | SamhopSamHop Microelectronics Corp. 三合微科三合微科股份有限公司 | Samhop | ||
100VN-ChannelDTMOS | WUMCWuxi Unigroup Microelectronics Company 紫光國微紫光國芯微電子股份有限公司 | WUMC | ||
10A,100VN-CHANNELMOSFET ■DESCRIPTION TheUTCUTT10N10isaN-channelenhancementmodepowerMOSFETusingUTC’sadvancedtechnologytoprovidethecustomerswithaminimumon-stateresistance,highswitchingspeedandultralowgatecharge.Italsocanwithstandhighenergypulseintheavalancheandcommutationmode. | UTCUnisonic Technologies 友順友順科技股份有限公司 | UTC | ||
N-ChannelMOSFETusesadvancedtrenchtechnology | DOINGTERSHENZHEN DOINGTER SEMICONDUCTOR CO., LTD 杜因特深圳市杜因特半導體有限公司 | DOINGTER | ||
PowerManagementinDC/DCConverter. | WIINSOKShenzhen Guan Hua Wei Ye Co., Ltd 微碩半導體微碩半導體(深圳)有限公司 | WIINSOK |
詳細參數(shù)
- 型號:
SPB10N10L
- 功能描述:
MOSFET N-CH 100V 10.3A D2PAK
- RoHS:
否
- 類別:
分離式半導體產(chǎn)品 >> FET - 單
- 系列:
SIPMOS®
- 標準包裝:
1,000
- 系列:
MESH OVERLAY™ FET
- 型:
MOSFET N 通道,金屬氧化物 FET
- 特點:
邏輯電平門
- 漏極至源極電壓(Vdss):
200V 電流 - 連續(xù)漏極(Id) @ 25°
- C:
18A 開態(tài)Rds(最大)@ Id, Vgs @ 25°
- C:
180 毫歐 @ 9A,10V Id 時的
- Vgs(th)(最大):
4V @ 250µA 閘電荷(Qg) @
- Vgs:
72nC @ 10V 輸入電容(Ciss) @
- Vds:
1560pF @ 25V 功率 -
- 最大:
40W
- 安裝類型:
通孔
- 封裝/外殼:
TO-220-3 整包
- 供應商設備封裝:
TO-220FP
- 包裝:
管件
供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
INFINEON/英飛凌 |
24+ |
TO263-3-2 |
20000 |
只做原廠渠道 可追溯貨源 |
詢價 | ||
INFINEON |
22+ |
原廠封裝 |
12450 |
原裝正品,實單請聯(lián)系 |
詢價 | ||
INFINEON |
24+ |
na |
8866 |
詢價 | |||
INFINEON |
23+ |
TO-263 |
7936 |
詢價 | |||
infineon |
2020+ |
SOT263 |
2850 |
百分百原裝正品 真實公司現(xiàn)貨庫存 本公司只做原裝 可 |
詢價 | ||
INFINEON |
23+ |
NA |
19960 |
只做進口原裝,終端工廠免費送樣 |
詢價 | ||
INFINE0N |
23+ |
TO-263 |
11846 |
一級代理商現(xiàn)貨批發(fā),原裝正品,假一罰十 |
詢價 | ||
Infineo |
21+ |
TO-263 |
12588 |
原裝現(xiàn)貨價格優(yōu)勢 |
詢價 | ||
INFINEON |
20+ |
TO-263 |
36900 |
原裝優(yōu)勢主營型號-可開原型號增稅票 |
詢價 | ||
Infineo |
2020+ |
TO-263 |
80000 |
只做自己庫存,全新原裝進口正品假一賠百,可開13%增 |
詢價 |
相關(guān)規(guī)格書
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相關(guān)庫存
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