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SPD

Over Voltage & Under Voltage Cut-Off With Surge Protection Device

OVCDFeatures ?ExtendsTheLifeOfYourFixtureByEliminating TemporaryOver/UnderVoltagesthatCan HarmSensitiveElectronicComponents ?Over6,000OperationsPerProductLifetime ?SafeRestore? -30SecondDelayonPower-Up -InstantDroponOver/UnderVoltageCondition -30SecondDel

ABLEPOWERPRODUCTS

ABLE Power Products

SPD

C to Ku Band Mixer, Detector, Modulator Applications

Features ?Verysmall-sizedceramicpackage ?Lessparasiticcomponents,conversionloss ?Manytypes:5singletypes,10integratedtypes

SANYOSanyo Semicon Device

三洋三洋電機(jī)株式會社

SPD

20 Amp 50-400 Volt 120 nsec FAST RECOVERY RECTIFIER

Features: ?FastRecovery:120nsecmaximum ?LowReverseLeakageCurrent ?SingleChipConstruction ?PIVto400V ?HermeticallySealed ?HighSurgeRating ?LowThermalResistance ?HigherVoltageDevicesAvailable–ContactFactory ?ForReversePolarityAddSuffix“R” ?Replacementfor

SSDI

Solid States Devices, Inc

SPD

Compact, High-Performance String Pot Dual Ouput to 50

TECTE Connectivity Ltd

泰科電子泰科電子有限公司

SPD01N60C3

N-Channel 650 V (D-S) MOSFET

FEATURES ?LowGateChargeQgResultsinSimpleDrive Requirement ?ImprovedGate,AvalancheandDynamicdV/dt Ruggedness ?FullyCharacterizedCapacitanceandAvalancheVoltage andCurrent ?ComplianttoRoHSdirective2002/95/EC

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體(臺灣)有限公司

SPD01N60C3

Cool MOS??Power Transistor

Feature ?Newrevolutionaryhighvoltagetechnology ?Ultralowgatecharge ?Periodicavalancherated ?Extremedv/dtrated ?Ultraloweffectivecapacitances ?Improvedtransconductance ?Pb-freeleadplating;RoHScompliant ?QualifiedaccordingtoJEDEC0)fortargetapplications

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SPD01N60C3

Cool MOS??Power Transistor

Feature ?Newrevolutionaryhighvoltagetechnology ?Ultralowgatecharge ?Periodicavalancherated ?Extremedv/dtrated ?Ultraloweffectivecapacitances ?Improvedtransconductance ?Pb-freeleadplating;RoHScompliant ?QualifiedaccordingtoJEDEC0)fortargetapplications

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SPD02N50C3

Cool MOS Power Transistor

Feature ?Newrevolutionaryhighvoltagetechnology ?Ultralowgatecharge ?Periodicavalancherated ?Extremedv/dtrated ?Ultraloweffectivecapacitances ?Improvedtransconductance

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SPD02N50C3

N-Channel MOSFET Transistor

?DESCRITION ?Improvedtransconductance ?FEATURES ?Staticdrain-sourceon-resistance: RDS(on)≤3? ?Enhancementmode: ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

SPD02N50C3

Power MOSFET

FEATURES ?LowGateChargeQgResultsinSimpleDrive Requirement ?ImprovedGate,AvalancheandDynamicdV/dt Ruggedness ?FullyCharacterizedCapacitanceandAvalancheVoltage andCurrent ?ComplianttoRoHSdirective2002/95/EC

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體(臺灣)有限公司

詳細(xì)參數(shù)

  • 型號:

    SPD

  • 制造商:

    SANYO

  • 制造商全稱:

    Sanyo Semicon Device

  • 功能描述:

    C to Ku Band Mixer, Detector, Modulator Applications

供應(yīng)商型號品牌批號封裝庫存備注價(jià)格
DIODES/美臺
23+
TO-220
69820
終端可以免費(fèi)供樣,支持BOM配單!
詢價(jià)
INFINEON
05+
原廠原裝
15374
只做全新原裝真實(shí)現(xiàn)貨供應(yīng)
詢價(jià)
INFINEON
21+
TO-252
3000
只做原裝,絕對現(xiàn)貨,原廠代理商渠道,歡迎電話微信查
詢價(jià)
INTEL
25+
PQFP
1200
原裝現(xiàn)貨熱賣中,提供一站式真芯服務(wù)
詢價(jià)
ON
24+
原廠封裝
7000
原裝現(xiàn)貨假一罰十
詢價(jià)
INFINEON/英飛凌
24+
TO252
9600
原裝現(xiàn)貨,優(yōu)勢供應(yīng),支持實(shí)單!
詢價(jià)
INFINEON
23+
TO-252
20000
專做原裝正品,假一罰百!
詢價(jià)
KODENSHI
13+
11352
原裝分銷
詢價(jià)
Infineontechnologies
2021++
原裝正品
5850
原裝現(xiàn)貨 假一賠百
詢價(jià)
ST
16+
TO-252
10000
全新原裝現(xiàn)貨
詢價(jià)
更多SPD供應(yīng)商 更新時(shí)間2025-4-5 11:00:00