首頁 >SPD30N03S2L>規(guī)格書列表
零件編號(hào) | 下載 訂購(gòu) | 功能描述/絲印 | 制造商 上傳企業(yè) | LOGO |
---|---|---|---|---|
SPD30N03S2L | N-Channel MOSFET Transistor ?DESCRITION ?Superiorthermalresistance ?FEATURES ?Staticdrain-sourceon-resistance: RDS(on)≤10m? ?Enhancementmode: ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | |
OptiMOSa Power-Transistor Feature ?N-Channel ?Enhancementmode ?LogicLevel ?ExcellentGateChargexRDS(on)product(FOM) ?Superiorthermalresistance ?175°Coperatingtemperature ?Avalancherated ?dv/dtrated ?Pb-freeleadplating;RoHScompliant | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
OptiMOS Power-Transistor Feature ?N-Channel ?Enhancementmode ?LogicLevel ?ExcellentGateChargexRDS(on)product(FOM) ?Superiorthermalresistance ?175°Coperatingtemperature ?Avalancherated ?dv/dtrated ?Pb-freeleadplating;RoHScompliant | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
OptiMOSa Power-Transistor Feature ?N-Channel ?Enhancementmode ?LogicLevel ?ExcellentGateChargexRDS(on)product(FOM) ?Superiorthermalresistance ?175°Coperatingtemperature ?Avalancherated ?dv/dtrated ?Pb-freeleadplating;RoHScompliant | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
N-Channel 30-V (D-S) MOSFET FEATURES ?TrenchFET?PowerMOSFET ?100RgandUISTested ?ComplianttoRoHSDirective2011/65/EU APPLICATIONS ?OR-ing ?Server ?DC/DC | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導(dǎo)體微碧半導(dǎo)體(臺(tái)灣)有限公司 | VBSEMI | ||
N-Channel 30-V (D-S) MOSFET FEATURES ?TrenchFET?PowerMOSFET ?100RgandUISTested ?ComplianttoRoHSDirective2011/65/EU APPLICATIONS ?OR-ing ?Server ?DC/DC | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導(dǎo)體微碧半導(dǎo)體(臺(tái)灣)有限公司 | VBSEMI | ||
N-Channel 30-V (D-S) MOSFET FEATURES ?TrenchFET?PowerMOSFET ?100RgandUISTested ?ComplianttoRoHSDirective2011/65/EU APPLICATIONS ?OR-ing ?Server ?DC/DC | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導(dǎo)體微碧半導(dǎo)體(臺(tái)灣)有限公司 | VBSEMI | ||
OptiMOS Power-Transistor Feature ?N-Channel ?Enhancementmode ?LogicLevel ?LowOn-ResistanceRDS(on) ?ExcellentGateChargexRDS(on)product(FOM) ?Superiorthermalresistance ?175°Coperatingtemperature ?Avalancherated ?dv/dtrated ?Pb-freeleadplating;RoHScompliant | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
N-Channel 30-V (D-S) MOSFET FEATURES ?TrenchFET?PowerMOSFET ?100RgandUISTested ?ComplianttoRoHSDirective2011/65/EU APPLICATIONS ?OR-ing ?Server ?DC/DC | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導(dǎo)體微碧半導(dǎo)體(臺(tái)灣)有限公司 | VBSEMI | ||
OptiMOS Power-Transistor Feature ?N-Channel ?Enhancementmode ?LogicLevel ?LowOn-ResistanceRDS(on) ?ExcellentGateChargexRDS(on)product(FOM) ?Superiorthermalresistance ?175°Coperatingtemperature ?Avalancherated ?dv/dtrated ?Pb-freeleadplating;RoHScompliant | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon |
詳細(xì)參數(shù)
- 型號(hào):
SPD30N03S2L
- 功能描述:
MOSFET N-CH 30V 30A
- RoHS:
否
- 制造商:
STMicroelectronics
- 晶體管極性:
N-Channel
- 汲極/源極擊穿電壓:
650 V
- 閘/源擊穿電壓:
25 V
- 漏極連續(xù)電流:
130 A 電阻汲極/源極
- RDS(導(dǎo)通):
0.014 Ohms
- 配置:
Single
- 安裝風(fēng)格:
Through Hole
- 封裝/箱體:
Max247
- 封裝:
Tube
供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
---|---|---|---|---|---|---|---|
INFIENION |
06+ |
原廠原裝 |
2481 |
只做全新原裝真實(shí)現(xiàn)貨供應(yīng) |
詢價(jià) | ||
INFINEON |
23+ |
TO-252 |
5000 |
原裝正品,假一罰十 |
詢價(jià) | ||
INFINEON |
23+ |
SOT-252 |
8000 |
只做原裝現(xiàn)貨 |
詢價(jià) | ||
infineon |
1415+ |
TO-252(DPAK) |
28500 |
全新原裝正品,優(yōu)勢(shì)熱賣 |
詢價(jià) | ||
INFINEON |
2016+ |
TO-252 |
6877 |
只做原裝,假一罰十,公司可開17%增值稅發(fā)票! |
詢價(jià) | ||
INFINEO |
2020+ |
TO-252 |
6877 |
百分百原裝正品 真實(shí)公司現(xiàn)貨庫(kù)存 本公司只做原裝 可 |
詢價(jià) | ||
INFINEON |
17+ |
TO-252 |
6200 |
100%原裝正品現(xiàn)貨 |
詢價(jià) | ||
INFINEON |
TO-252 |
6877 |
正品原裝--自家現(xiàn)貨-實(shí)單可談 |
詢價(jià) | |||
進(jìn)口原裝 |
23+ |
SMD |
25048 |
全新原裝現(xiàn)貨,專業(yè)代理熱賣 |
詢價(jià) | ||
INFINEON |
24+ |
TO-252 |
1450 |
詢價(jià) |
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