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ISPD08N50C3

N-ChannelMOSFETTransistor

?DESCRITION ?Improvedtransconductance ?FEATURES ?Staticdrain-sourceon-resistance: RDS(on)≤600m? ?Enhancementmode: ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

SPA08N50C3

IscN-ChannelMOSFETTransistor

?FEATURES ?DrainCurrentID=7.6A@TC=25℃ ?DrainSourceVoltage- :VDSS=500V(Min) ?StaticDrain-SourceOn-Resistance :RDS(on)=0.6Ω(Max) ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation ?APPLICATIONS ?Switching

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

SPA08N50C3

CoolMOS??PowerTransistor

Feature ?Newrevolutionaryhighvoltagetechnology ?Ultralowgatecharge ?Periodicavalancherated ?Extremedv/dtrated ?Ultraloweffectivecapacitances ?Improvedtransconductance ?PG-TO-220-3-31;-3-111:Fullyisolatedpackage(2500VAC;1minute) ?Pb-freeleadplating;RoHScomp

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SPA08N50C3

NewrevolutionaryhighvoltagetechnologyUltralowgatechargePeriodicavalancherated

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SPD08N50C3

CoolMOSPowerTransistor

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SPD08N50C3

CoolMOS??PowerTransistor

Feature ?Newrevolutionaryhighvoltagetechnology ?WorldwidebestRDS(on)inTO-252 ?Ultralowgatecharge ?Periodicavalancherated ?Extremedv/dtrated ?Ultraloweffectivecapacitances ?Improvedtransconductance ?Pb-freeleadplating;RoHScompliant;availableinHalogenfreem

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SPD08N50C3

N-ChannelMOSFETTransistor

?DESCRITION ?Improvedtransconductance ?FEATURES ?Staticdrain-sourceon-resistance: RDS(on)≤600m? ?Enhancementmode: ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

SPD08N50C3

CoolMOS??PowerTransistor

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SPI08N50C3

iscN-ChannelMOSFETTransistor

?DESCRITION ?Newrevolutionaryhighvoltagetechnology ?Ultraloweffectivecapacitance ?FEATURES ?Staticdrain-sourceon-resistance: RDS(on)≤0.6? ?Enhancementmode ?FastSwitchingSpeed ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performancean

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

SPI08N50C3

NewrevolutionaryhighvoltagetechnologyUltralowgatechargePeriodicavalancherated

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

詳細(xì)參數(shù)

  • 型號(hào)：

    SPI08N50C3XK

  • 制造商：

    Rochester Electronics LLC

  • 制造商：

    Infineon Technologies AG

供應(yīng)商型號(hào)品牌批號(hào)封裝庫存備注價(jià)格
INFINEON
23+
8000
只做原裝現(xiàn)貨
 詢價(jià)
Infineon
18+
NA
3000
進(jìn)口原裝正品優(yōu)勢供應(yīng)
 詢價(jià)
Infineon
1931+
N/A
493
加我qq或微信，了解更多詳細(xì)信息,體驗(yàn)一站式購物
 詢價(jià)
INFINEON
1809+
TO262-3
1675
就找我吧!--邀您體驗(yàn)愉快問購元件!
 詢價(jià)
Infineon
22+
NA
493
加我QQ或微信咨詢更多詳細(xì)信息,
 詢價(jià)
INFINEON/英飛凌
21+
NA
12820
只做原裝,質(zhì)量保證
 詢價(jià)
Infineon Technologies
22+
TO2623 Long Leads I2Pak TO262A
9000
原廠渠道,現(xiàn)貨配單
 詢價(jià)
INFINEON/英飛凌
23+
NA
5000
電子元器件供應(yīng)原裝現(xiàn)貨. 優(yōu)質(zhì)獨(dú)立分銷。原廠核心渠道
 詢價(jià)
INFINEON/英飛凌
NA
8600
原裝正品,歡迎來電咨詢!
 詢價(jià)
INFINEON/英飛凌
22+
N/A
12245
現(xiàn)貨,原廠原裝假一罰十!
 詢價(jià)
更多SPI08N50C3XK供應(yīng)商 更新時(shí)間2025-2-3 15:03:00

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