首頁 >SPR50P03-C>規(guī)格書列表
零件編號 | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
SPR50P03-C | P-Channel Enhancement Mode Power MOSFET | SECOSSeCoS Halbleitertechnologie GmbH 喜可士喜可士股份有限公司 | SECOS | |
P-Channel30V(D-S)MOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導(dǎo)體微碧半導(dǎo)體(臺灣)有限公司 | VBSEMI | ||
P-Channel30V(D-S)MOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導(dǎo)體微碧半導(dǎo)體(臺灣)有限公司 | VBSEMI | ||
P-ChannelEnhancementModeFieldEffectTransistor FEATURES ■-30V,-47A,RDS(ON)=20m?@VGS=-10V. RDS(ON)=32m?@VGS=-4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-220&TO-263package. | CETChino-Excel Technology 華瑞華瑞股份有限公司 | CET | ||
P-Channel30-V(D-S)MOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導(dǎo)體微碧半導(dǎo)體(臺灣)有限公司 | VBSEMI | ||
P-ChannelEnhancementModeFieldEffectTransistor FEATURES -30V,-47A,RDS(ON)=20mW@VGS=-10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. RDS(ON)=32mW@VGS=-4.5V. Leadfreeproductisacquired. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 | CET-MOS | ||
P-ChannelEnhancementModeFieldEffectTransistor FEATURES -30V,-47A,RDS(ON)=20mW@VGS=-10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. RDS(ON)=32mW@VGS=-4.5V. Leadfreeproductisacquired. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 | CET-MOS | ||
P-ChannelEnhancementModeFieldEffectTransistor FEATURES ■-30V,-47A,RDS(ON)=20m?@VGS=-10V. RDS(ON)=32m?@VGS=-4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-220&TO-263package. | CETChino-Excel Technology 華瑞華瑞股份有限公司 | CET | ||
P-ChannelPowerMOSFET | JIANGSUJiangsu Changjiang Electronics Technology Co., Ltd 長電科技江蘇長電科技股份有限公司 | JIANGSU | ||
P??hannelLogicLevelEnhancementModeFieldEffectTransistor ProductSummary: BVDSS‐30V RDSON(MAX.)60mΩ ID‐6A Pb‐FreeLeadPlating&HalogenFree | EXCELLIANCEExcelliance MOS Corp. 杰力科技杰力科技股份有限公司 | EXCELLIANCE | ||
P??hannelLogicLevelEnhancementModeFieldEffectTransistor | EXCELLIANCEExcelliance MOS Corp. 杰力科技杰力科技股份有限公司 | EXCELLIANCE | ||
P??hannelLogicLevelEnhancementModeFieldEffectTransistor ProductSummary: BVDSS‐30V RDSON(MAX.)50mΩ ID‐4.5A Pb‐FreeLeadPlating&HalogenFree | EXCELLIANCEExcelliance MOS Corp. 杰力科技杰力科技股份有限公司 | EXCELLIANCE | ||
P??hannelLogicLevelEnhancementModeFieldEffectTransistor | EXCELLIANCEExcelliance MOS Corp. 杰力科技杰力科技股份有限公司 | EXCELLIANCE | ||
P??hannelLogicLevelEnhancementModeFieldEffectTransistor | EXCELLIANCEExcelliance MOS Corp. 杰力科技杰力科技股份有限公司 | EXCELLIANCE | ||
P-ChannelEnhancementModePowerMOSFET | HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd 華之美半導(dǎo)體深圳市華之美半導(dǎo)體有限公司 | HMSEMI | ||
P-ChannelEnhancementModePowerMOSFET | HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd 華之美半導(dǎo)體深圳市華之美半導(dǎo)體有限公司 | HMSEMI | ||
P-ChannelEnhancementModePowerMOSFET | HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd 華之美半導(dǎo)體深圳市華之美半導(dǎo)體有限公司 | HMSEMI | ||
JJW | ||||
P-Channel30V(D-S)MOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導(dǎo)體微碧半導(dǎo)體(臺灣)有限公司 | VBSEMI | ||
P-ChannelPowerMOSFET | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI |
供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
PHI |
22+ |
QFP100 |
5000 |
原裝現(xiàn)貨庫存.價格優(yōu)勢 |
詢價 | ||
24+ |
QFP100 |
3629 |
原裝優(yōu)勢!房間現(xiàn)貨!歡迎來電! |
詢價 | |||
DIOTECELECTRONICS |
22+ |
NA |
30000 |
100%全新原裝 假一賠十 |
詢價 | ||
ROHM/羅姆 |
22+ |
SMDDIP |
50000 |
原裝正品.假一罰十 |
詢價 | ||
ROHM |
SMDDIP |
185600 |
一級代理 原裝正品假一罰十價格優(yōu)勢長期供貨 |
詢價 | |||
ROHM |
新 |
21036 |
全新原裝 貨期兩周 |
詢價 | |||
ROHM羅姆 |
23+ |
DIP-3 |
90000 |
一定原裝深圳現(xiàn)貨 |
詢價 | ||
N/A |
2021+ |
SMD |
100500 |
一級代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨,長期排單到貨 |
詢價 | ||
ROHM |
20+ |
光電元件 |
9136 |
就找我吧!--邀您體驗愉快問購元件! |
詢價 | ||
ROHM/羅姆 |
23+ |
DIP |
50000 |
全新原裝正品現(xiàn)貨,支持訂貨 |
詢價 |
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