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CGA-6618Z

DUALCATV1MHzto1000MHzHIGHLINEARITYGaAsHBTAMPLIFIER

ProductDescription RFMD’sCGA-6681(Z)isahighperformanceGaAsHBTMMICAmplifier.DesignedwiththeInGaPprocesstechnologyforexcellentreliability.ADarlingtonconfigurationisutilizedforbroadbandperformance.Theheterojunctionincreasesbreakdownvoltageandminimizesleakagecurren

RFMD

RF Micro Devices

CGA-6618Z

DualCATV1MHzto1000MHzHighLinearityGaAsHBTAmplifier

ProductDescription SirenzaMicrodevice’sCGA-6618isahighperformanceGaAsHBTMMICAmplifier.DesignedwiththeInGaPprocesstechnologyforexcellentreliability.ADarlingtonconfigurationisutilizedforbroadbandperformance.Theheterojunctionincreasesbreakdownvoltageandminimizesle

SIRENZA

SIRENZA MICRODEVICES

GSC6618

N-CHANNELENHANCEMENTMODEPOWERMOSFET

GTMGTM CORPORATION

勤益投資控股勤益投資控股股份有限公司

HM6618A

integratedUSBType-C

HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd

華之美半導(dǎo)體深圳市華之美半導(dǎo)體有限公司

HM6618B

integratedUSBType-C

HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd

華之美半導(dǎo)體深圳市華之美半導(dǎo)體有限公司

IRF6618

PowerMOSFET

Description TheIRF6609combinesthelatestHEXFET?PowerMOSFETSilicontechnologywiththeadvancedDirectFETTMpackagingtoachievetheloweston-stateresistanceinapackagethathasthefootprintofanSO-8andonly0.7mmprofile.TheDirectFETpackageiscompatiblewithexistinglayoutge

IRF

International Rectifier

IRF6618

HEXFETPowerMOSFET

Description TheIRF6618combinesthelatestHEXFET?PowerMOSFETSilicontechnologywiththeadvancedDirectFETTMpackagingtoachievetheloweston-stateresistanceinapackagethathasthefootprintofanSO-8andonly0.7mmprofile.TheDirectFETpackageiscompatiblewithexistinglayoutge

IRF

International Rectifier

IRF6618PBF

IdealforCPUCoreDC-DCConverters

IRF

International Rectifier

IRF6618PBF

DirectFET?PowerMOSFET?

Description TheIRF6618PbFcombinesthelatestHEXFET?PowerMOSFETSilicontechnologywiththeadvancedDirectFETTMpackagingtoachievetheloweston-stateresistanceinapackagethathasthefootprintofaSO-8andonly0.7mmprofile.TheDirectFETpackageiscompatiblewithexistinglayout

IRF

International Rectifier

IRF6618TRPBF

DirectFET?PowerMOSFET?

Description TheIRF6618PbFcombinesthelatestHEXFET?PowerMOSFETSilicontechnologywiththeadvancedDirectFETTMpackagingtoachievetheloweston-stateresistanceinapackagethathasthefootprintofaSO-8andonly0.7mmprofile.TheDirectFETpackageiscompatiblewithexistinglayout

IRF

International Rectifier

詳細(xì)參數(shù)

  • 型號(hào)：

    SSG6618

  • 制造商：

    SECOS

  • 制造商全稱：

    SeCoS Halbleitertechnologie GmbH

  • 功能描述：

    N-Channel Enhancement Mode Power Mos.FET

供應(yīng)商型號(hào)品牌批號(hào)封裝庫存備注價(jià)格
SeCoS
23+
SOP-8
63000
原裝正品現(xiàn)貨
 詢價(jià)
SECOS
23+
SOP-8
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價(jià)
VB
21+
SOP-8
10000
原裝現(xiàn)貨假一罰十
 詢價(jià)
SECOS
2022+
SOP-8
3000
原廠代理 終端免費(fèi)提供樣品
 詢價(jià)
SECOS
24+
NA/
50000
優(yōu)勢(shì)代理渠道,原裝正品,可全系列訂貨開增值稅票
 詢價(jià)
SECOS
2022+
SOP-8
30000
進(jìn)口原裝現(xiàn)貨供應(yīng),原裝 假一罰十
 詢價(jià)
SECOS
20+
SOP-8
300000
現(xiàn)貨很近!原廠很遠(yuǎn)!只做原裝
 詢價(jià)
SECOS
23+
SOP-8
11200
原廠授權(quán)一級(jí)代理、全球訂貨優(yōu)勢(shì)渠道、可提供一站式BO
 詢價(jià)
HAMOS/漢姆
24+
SOP-8
60000
全新原裝現(xiàn)貨
 詢價(jià)
SECOS
24+
SOP-8
5000
只做原裝公司現(xiàn)貨
 詢價(jià)
更多SSG6618供應(yīng)商 更新時(shí)間2025-5-4 17:10:00

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