IRF6618中文資料IRF數(shù)據(jù)手冊PDF規(guī)格書
IRF6618規(guī)格書詳情
Description
The IRF6618 combines the latest HEXFET? Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of an SO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, IMPROVING previous best thermal resistance by 80.
? Application Specific MOSFETs
? Ideal for CPU Core DC-DC Converters
? Low Conduction Losses
? Low Switching Losses
? Low Profile (<0.7 mm)
? Dual Sided Cooling Compatible
? Compatible with existing Surface Mount Techniques
產(chǎn)品屬性
- 型號：
IRF6618
- 功能描述：
MOSFET 30V N-CH 2.2mOhm HEXFET 43 nC
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶體管極性：
N-Channel
- 汲極/源極擊穿電壓：
650 V
- 閘/源擊穿電壓：
25 V
- 漏極連續(xù)電流：
130 A 電阻汲極/源極
- RDS（導(dǎo)通）：
0.014 Ohms
- 配置：
Single
- 安裝風(fēng)格：
Through Hole
- 封裝/箱體：
Max247
- 封裝：
Tube
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
Infineon/英飛凌 |
24+ |
MG-WDSON-5 |
6000 |
全新原裝深圳倉庫現(xiàn)貨有單必成 |
詢價 | ||
INFINEON/英飛凌 |
24+ |
NA |
80000 |
只做自己庫存,全新原裝進(jìn)口正品假一賠百,可開13%增 |
詢價 | ||
INFINEON/英飛凌 |
23+ |
QFN |
3000 |
一級代理原廠VIP渠道,專注軍工、汽車、醫(yī)療、工業(yè)、 |
詢價 | ||
IR |
2447 |
SMD |
100500 |
一級代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨,長期排單到貨 |
詢價 | ||
IR |
1923+ |
原廠封裝 |
8600 |
萊克訊原廠貨源每一片都來自原廠原裝現(xiàn)貨薄利多 |
詢價 | ||
IR |
23+ |
DirectFET |
50000 |
全新原裝正品現(xiàn)貨,支持訂貨 |
詢價 | ||
IR |
23+ |
DirectFET |
56147 |
##公司主營品牌長期供應(yīng)100%原裝現(xiàn)貨可含稅提供技術(shù) |
詢價 | ||
IOR |
24+ |
QFN |
5000 |
詢價 | |||
原裝IR |
20+ |
DirectFET |
3517 |
進(jìn)口原裝現(xiàn)貨,假一賠十 |
詢價 | ||
Infineon Technologies |
22+ |
DirectFET? Isometric MT |
9000 |
原廠渠道,現(xiàn)貨配單 |
詢價 |
