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IRF6613TRPBF規(guī)格書詳情
Description
The IRF6613PbF combines the latest HEXFET? Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of an SO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80.
? RoHS Compliant
? Lead-Free (Qualified up to 260°C Reflow)
? Application Specific MOSFETs
? Ideal for CPU Core DC-DC Converters
? Low Conduction Losses
? High Cdv/dt Immunity
? Low Profile (<0.7mm)
? Dual Sided Cooling Compatible
? Compatible with existing Surface Mount Techniques
產(chǎn)品屬性
- 型號：
IRF6613TRPBF
- 功能描述：
MOSFET 40V N-CH HEXFET 3.4mOhms 42nC
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶體管極性：
N-Channel
- 汲極/源極擊穿電壓：
650 V
- 閘/源擊穿電壓：
25 V
- 漏極連續(xù)電流：
130 A 電阻汲極/源極
- RDS（導(dǎo)通）：
0.014 Ohms
- 配置：
Single
- 安裝風格：
Through Hole
- 封裝/箱體：
Max247
- 封裝：
Tube
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
INFINEON |
22+23+ |
MG-WDSON-5 |
8000 |
新到現(xiàn)貨，只做原裝進口 |
詢價 | ||
IR |
1922+ |
SOIC |
6852 |
只做原裝正品現(xiàn)貨!或訂貨假一賠十! |
詢價 | ||
IR |
23+ |
SOIC |
50000 |
全新原裝正品現(xiàn)貨,支持訂貨 |
詢價 | ||
Infineon/英飛凌 |
21+ |
MG-WDSON-5 |
6820 |
只做原裝,質(zhì)量保證 |
詢價 | ||
IR |
22+ |
SOIC |
8000 |
原裝正品支持實單 |
詢價 | ||
Infineon/英飛凌 |
24+ |
MG-WDSON-5 |
7188 |
秉承只做原裝 終端我們可以提供技術(shù)支持 |
詢價 | ||
INFINEON |
24+ |
MG-WDSON-5 |
39500 |
進口原裝現(xiàn)貨 支持實單價優(yōu) |
詢價 | ||
Infineon/英飛凌 |
23+ |
MG-WDSON-5 |
25630 |
原裝正品 |
詢價 | ||
IR |
24+ |
SOIC |
65300 |
一級代理/放心購買! |
詢價 | ||
INFINEON/IR |
NA |
16355 |
一級代理 原裝正品假一罰十價格優(yōu)勢長期供貨 |
詢價 |
