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IRF6612TR1規(guī)格書詳情
Description
The IRF6612 combines the latest HEXFET? Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, IMPROVING previous best thermal resistance by 80.
? Application Specific MOSFETs
? Ideal for CPU Core DC-DC Converters
? Low Conduction Losses
? Low Switching Losses
? Low Profile (<0.7 mm)
? Dual Sided Cooling Compatible
? Compatible with existing Surface Mount Techniques
產(chǎn)品屬性
- 型號(hào)：
IRF6612TR1
- 功能描述：
MOSFET 30V 1 N-CH HEXFET DIRECTFET MX
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶體管極性：
N-Channel
- 汲極/源極擊穿電壓：
650 V
- 閘/源擊穿電壓：
25 V
- 漏極連續(xù)電流：
130 A 電阻汲極/源極
- RDS（導(dǎo)通）：
0.014 Ohms
- 配置：
Single
- 安裝風(fēng)格：
Through Hole
- 封裝/箱體：
Max247
- 封裝：
Tube
| 供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
IR |
23+ |
NA/ |
3470 |
原裝現(xiàn)貨,當(dāng)天可交貨,原型號(hào)開票 |
詢價(jià) | ||
VISHAY/威世 |
2023+ |
QFN |
2500 |
一級(jí)代理優(yōu)勢現(xiàn)貨,全新正品直營店 |
詢價(jià) | ||
IR |
22+ |
QFN |
8000 |
原裝正品支持實(shí)單 |
詢價(jià) | ||
IR |
QFN |
68900 |
原包原標(biāo)簽100%進(jìn)口原裝常備現(xiàn)貨! |
詢價(jià) | |||
IR |
24+ |
DirectFETtradeIso |
7500 |
詢價(jià) | |||
IR |
24+ |
65230 |
詢價(jià) | ||||
IOR |
21+ |
QFN/Dir |
12588 |
原裝正品,自己庫存 假一罰十 |
詢價(jià) | ||
Infineon Technologies |
23+ |
原裝 |
7000 |
詢價(jià) | |||
Infineon Technologies |
2022+ |
DirectFET? 等容 MX |
38550 |
全新原裝 支持表配單 中國著名電子元器件獨(dú)立分銷 |
詢價(jià) | ||
IR原裝現(xiàn)貨 |
0628+ |
QFN |
3000 |
一級(jí)代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力 |
詢價(jià) |
