IRF6611中文資料IRF數(shù)據(jù)手冊PDF規(guī)格書
IRF6611規(guī)格書詳情
Description
The IRF6611 combines the latest HEXFET? power MOSFET silicon technology with advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of an SO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, IMPROVING previous best thermal resistance by 80.
? Low Profile (<0.7 mm)
? Dual Sided Cooling Compatible
? Ultra Low Package Inductance
? Optimized for High Frequency Switching above 1MHz
? Ideal for CPU Core DC-DC Converters
? Optimized for SyncFET Socket of Sync. Buck Converter
? Low Conduction Losses
? Compatible with Existing Surface Mount Techniques
產(chǎn)品屬性
- 型號：
IRF6611
- 功能描述：
MOSFET 30V 1 N-CH HEXFET DIRECTFET MX
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶體管極性：
N-Channel
- 汲極/源極擊穿電壓：
650 V
- 閘/源擊穿電壓：
25 V
- 漏極連續(xù)電流：
130 A 電阻汲極/源極
- RDS（導通）：
0.014 Ohms
- 配置：
Single
- 安裝風格：
Through Hole
- 封裝/箱體：
Max247
- 封裝：
Tube
| 供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
IRF |
21+ |
DIRECTF |
10000 |
原裝現(xiàn)貨假一罰十 |
詢價 | ||
Infineon Technologies |
22+ |
DirectFET? Isometric MX |
9000 |
原廠渠道,現(xiàn)貨配單 |
詢價 | ||
IR |
24+ |
DirectFETtradeIso |
7500 |
詢價 | |||
IR |
23+ |
QFN |
999999 |
原裝正品現(xiàn)貨量大可訂貨 |
詢價 | ||
IR |
22+23+ |
SMD |
8000 |
新到現(xiàn)貨，只做原裝進口 |
詢價 | ||
IR |
2022 |
SMD |
80000 |
原裝現(xiàn)貨,OEM渠道,歡迎咨詢 |
詢價 | ||
IR |
22+ |
QFN |
8000 |
原裝正品支持實單 |
詢價 | ||
IRF |
10+/14+ |
DIRECTF |
1748 |
一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力 |
詢價 | ||
IR |
23+ |
SOT223 |
7750 |
全新原裝優(yōu)勢 |
詢價 | ||
IOR |
24+ |
DirectFET |
2600 |
原裝現(xiàn)貨假一賠十 |
詢價 |
