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IRF6608中文資料IRF數(shù)據(jù)手冊(cè)PDF規(guī)格書
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Description
The IRF6608 combines the latest HEXFET? Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, IMPROVING previous best thermal resistance by 80.
● Application Specific MOSFETs
● Ideal for CPU Core DC-DC Converters
● Low Conduction Losses
● Low Switching Losses
● Low Profile (<0.7 mm)
● Dual Sided Cooling Compatible
● Compatible with existing Surface Mount Techniques
產(chǎn)品屬性
- 型號(hào):
IRF6608
- 功能描述:
MOSFET
- RoHS:
否
- 制造商:
STMicroelectronics
- 晶體管極性:
N-Channel
- 汲極/源極擊穿電壓:
650 V
- 閘/源擊穿電壓:
25 V
- 漏極連續(xù)電流:
130 A 電阻汲極/源極
- RDS(導(dǎo)通):
0.014 Ohms
- 配置:
Single
- 安裝風(fēng)格:
Through Hole
- 封裝/箱體:
Max247
- 封裝:
Tube
供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
---|---|---|---|---|---|---|---|
IR |
23+ |
NA/ |
450 |
優(yōu)勢(shì)代理渠道,原裝正品,可全系列訂貨開(kāi)增值稅票 |
詢價(jià) | ||
IOR |
2016+ |
QFN |
6528 |
只做進(jìn)口原裝現(xiàn)貨!假一賠十! |
詢價(jià) | ||
IR |
DirectFET |
68900 |
原包原標(biāo)簽100%進(jìn)口原裝常備現(xiàn)貨! |
詢價(jià) | |||
IR |
22+ |
FQN |
8000 |
原裝正品支持實(shí)單 |
詢價(jià) | ||
IR |
24+ |
DirectFETtradeIso |
38400 |
詢價(jià) | |||
IRF6608 |
81535 |
81535 |
詢價(jià) | ||||
IR |
22+ |
SMD |
57455 |
鄭重承諾只做原裝進(jìn)口貨 |
詢價(jià) | ||
IR |
23+ |
SMD |
全新原裝現(xiàn)貨 優(yōu)勢(shì)庫(kù)存 |
詢價(jià) | |||
IR |
23+ |
鐵面 |
5000 |
原裝正品,假一罰十 |
詢價(jià) | ||
INTERNATIONALRECTIFIER |
2020+ |
NA |
80000 |
只做自己庫(kù)存,全新原裝進(jìn)口正品假一賠百,可開(kāi)13%增 |
詢價(jià) |