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IRF6608中文資料IRF數(shù)據(jù)手冊(cè)PDF規(guī)格書

IRF6608
廠商型號(hào)

IRF6608

功能描述

lHEXFET Power MOSFET

文件大小

178.74 Kbytes

頁(yè)面數(shù)量

8 頁(yè)

生產(chǎn)廠商 International Rectifier
企業(yè)簡(jiǎn)稱

IRF

中文名稱

International Rectifier官網(wǎng)

原廠標(biāo)識(shí)
數(shù)據(jù)手冊(cè)

下載地址一下載地址二到原廠下載

更新時(shí)間

2025-1-23 20:00:00

IRF6608規(guī)格書詳情

Description

The IRF6608 combines the latest HEXFET? Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, IMPROVING previous best thermal resistance by 80.

● Application Specific MOSFETs

● Ideal for CPU Core DC-DC Converters

● Low Conduction Losses

● Low Switching Losses

● Low Profile (<0.7 mm)

● Dual Sided Cooling Compatible

● Compatible with existing Surface Mount Techniques

產(chǎn)品屬性

  • 型號(hào):

    IRF6608

  • 功能描述:

    MOSFET

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶體管極性:

    N-Channel

  • 汲極/源極擊穿電壓:

    650 V

  • 閘/源擊穿電壓:

    25 V

  • 漏極連續(xù)電流:

    130 A 電阻汲極/源極

  • RDS(導(dǎo)通):

    0.014 Ohms

  • 配置:

    Single

  • 安裝風(fēng)格:

    Through Hole

  • 封裝/箱體:

    Max247

  • 封裝:

    Tube

供應(yīng)商 型號(hào) 品牌 批號(hào) 封裝 庫(kù)存 備注 價(jià)格
IR
23+
NA/
450
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IOR
2016+
QFN
6528
只做進(jìn)口原裝現(xiàn)貨!假一賠十!
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DirectFET
68900
原包原標(biāo)簽100%進(jìn)口原裝常備現(xiàn)貨!
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IR
22+
FQN
8000
原裝正品支持實(shí)單
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24+
DirectFETtradeIso
38400
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IRF6608
81535
81535
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IR
22+
SMD
57455
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詢價(jià)
IR
23+
SMD
3000
全新原裝現(xiàn)貨 優(yōu)勢(shì)庫(kù)存
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IR
23+
鐵面
5000
原裝正品,假一罰十
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INTERNATIONALRECTIFIER
2020+
NA
80000
只做自己庫(kù)存,全新原裝進(jìn)口正品假一賠百,可開(kāi)13%增
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