IRF6607中文資料IRF數(shù)據(jù)手冊PDF規(guī)格書
IRF6607規(guī)格書詳情
Description
The IRF6607 combines the latest HEXFET? Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of an SO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and process. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, IMPROVING previous best thermal resistance by 80.
? Application Specific MOSFETs
? Ideal for CPU Core DC-DC Converters
? Low Conduction Losses
? High Cdv/dt Immunity
? Low Profile (<0.7 mm)
? Dual Sided Cooling Compatible
? Compatible with existing Surface Mount Techniques
產(chǎn)品屬性
- 型號：
IRF6607
- 功能描述：
MOSFET
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶體管極性：
N-Channel
- 汲極/源極擊穿電壓：
650 V
- 閘/源擊穿電壓：
25 V
- 漏極連續(xù)電流：
130 A 電阻汲極/源極
- RDS（導通）：
0.014 Ohms
- 配置：
Single
- 安裝風格：
Through Hole
- 封裝/箱體：
Max247
- 封裝：
Tube
| 供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
IR |
23+ |
SMD |
11500 |
原裝現(xiàn)貨,價格優(yōu)勢 |
詢價 | ||
IR |
25+23+ |
QFN |
18980 |
絕對原裝正品全新進口深圳現(xiàn)貨 |
詢價 | ||
IR |
17+ |
QFN |
6200 |
100%原裝正品現(xiàn)貨 |
詢價 | ||
IOR |
24+ |
SMD |
5000 |
全新原裝正品,現(xiàn)貨銷售 |
詢價 | ||
IR |
22+ |
SMD |
6500 |
現(xiàn)貨,原廠原裝假一罰十! |
詢價 | ||
IR |
23+ |
SOP-8 |
1009 |
優(yōu)勢庫存 |
詢價 | ||
IR |
23+ |
DirectFETMT |
19526 |
詢價 | |||
IOR |
23+ |
DIRECTFE |
4500 |
全新原裝、誠信經(jīng)營、公司現(xiàn)貨銷售 |
詢價 | ||
IR |
24+ |
NA |
4500 |
只做原裝正品現(xiàn)貨 歡迎來電查詢15919825718 |
詢價 | ||
IOR |
23+ |
QFN |
12800 |
##公司主營品牌長期供應100%原裝現(xiàn)貨可含稅提供技術 |
詢價 |
