IRF6613中文資料IRF數據手冊PDF規(guī)格書
IRF6613規(guī)格書詳情
Description
The IRF6613 combines the latest HEXFET? Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of an SO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, IMPROVING previous best thermal resistance by 80.
? Application Specific MOSFETs
? Ideal for Synchronous Rectification in Isolated DC-DC Converters
? Low Conduction Losses
? Low Switching Losses
? Low Profile (<0.7 mm)
? Dual Sided Cooling Compatible
? Compatible with existing Surface Mount Techniques
產品屬性
- 型號：
IRF6613
- 功能描述：
MOSFET 40V N-CH HEXFET 3.4mOhms 42nC
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶體管極性：
N-Channel
- 汲極/源極擊穿電壓：
650 V
- 閘/源擊穿電壓：
25 V
- 漏極連續(xù)電流：
130 A 電阻汲極/源極
- RDS（導通）：
0.014 Ohms
- 配置：
Single
- 安裝風格：
Through Hole
- 封裝/箱體：
Max247
- 封裝：
Tube
| 供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
Infineon |
23+ |
MG-WDSON-5 |
15500 |
英飛凌優(yōu)勢渠道全系列在售 |
詢價 | ||
IR |
23+ |
QFN |
7750 |
全新原裝優(yōu)勢 |
詢價 | ||
Infineon/英飛凌 |
24+ |
MG-WDSON-5 |
25000 |
原裝正品,假一賠十! |
詢價 | ||
IR |
23+ |
DIRECTFET |
20000 |
原裝正品現貨 |
詢價 | ||
IR |
24+ |
NA/ |
3352 |
優(yōu)勢代理渠道,原裝正品,可全系列訂貨開增值稅票 |
詢價 | ||
IR |
21+ |
DIRECTFET |
30000 |
百域芯優(yōu)勢 實單必成 可開13點增值稅 |
詢價 | ||
IR |
22+ |
DIRECTFET |
12245 |
現貨,原廠原裝假一罰十! |
詢價 | ||
IR |
06+ |
DirectFET |
3352 |
一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力 |
詢價 | ||
INFINE0N |
21+ |
DirectFET MT |
32568 |
100%進口原裝!長期供應!絕對優(yōu)勢價格(誠信經營 |
詢價 | ||
IR |
25+23+ |
SOIC |
44692 |
絕對原裝正品全新進口深圳現貨 |
詢價 |
