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IRF6612TRPBF規(guī)格書詳情
Description
The IRF6612PbF combines the latest HEXFET? Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques. Application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80.
? RoHs Compliant
? Lead-Free (Qualified up to 260°C Reflow)
? Application Specific MOSFETs
? Ideal for CPU Core DC-DC Converters
? Low Conduction Losses
? High Cdv/dt Immunity
? Low Profile (<0.7mm)
? Dual Sided Cooling Compatible
? Compatible with existing Surface Mount Techniques
產(chǎn)品屬性
- 型號(hào)：
IRF6612TRPBF
- 功能描述：
MOSFET 30V 1 N-CH HEXFET DIRECTFET MX
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶體管極性：
N-Channel
- 汲極/源極擊穿電壓：
650 V
- 閘/源擊穿電壓：
25 V
- 漏極連續(xù)電流：
130 A 電阻汲極/源極
- RDS（導(dǎo)通）：
0.014 Ohms
- 配置：
Single
- 安裝風(fēng)格：
Through Hole
- 封裝/箱體：
Max247
- 封裝：
Tube
| 供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
IR |
22+ |
QFN |
100000 |
代理渠道/只做原裝/可含稅 |
詢價(jià) | ||
IR |
22+ |
DirectFET |
14400 |
原裝正品 |
詢價(jià) | ||
IR |
21+ |
IR |
4800 |
原裝現(xiàn)貨假一賠十 |
詢價(jià) | ||
IR |
21+ |
QFN |
9800 |
只做原裝正品假一賠十!正規(guī)渠道訂貨! |
詢價(jià) | ||
Infineon Technologies |
21+ |
DIRECTFET? MX |
4800 |
100%進(jìn)口原裝!長(zhǎng)期供應(yīng)!絕對(duì)優(yōu)勢(shì)價(jià)格(誠(chéng)信經(jīng)營(yíng))! |
詢價(jià) | ||
Infineon Technologies |
21+ |
DirectFET? Isometric MX |
13880 |
公司只售原裝,支持實(shí)單 |
詢價(jià) | ||
IR |
23+ |
QFN |
90000 |
一定原裝正品 |
詢價(jià) | ||
IR |
1105+ |
DIRECTFET |
435 |
原裝現(xiàn)貨 |
詢價(jià) | ||
IR |
23+ |
NA/ |
14400 |
優(yōu)勢(shì)代理渠道,原裝正品,可全系列訂貨開增值稅票 |
詢價(jià) | ||
IR |
23+ |
IR |
20000 |
只做原裝 |
詢價(jià) |
