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IRF6617TRPBF規(guī)格書詳情
Description
The IRF6617PbF combines the latest HEXFET? power MOSFET silicon technology with advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a Micro8? and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80.
? RoHS Compliant
? Lead-Free (Qualified up to 260°C Reflow)
? Application Specific MOSFETs
? Ideal for CPU Core DC-DC Converters
? Low Conduction Losses
? High Cdv/dt Immunity
? Low Profile (<0.7mm)
? Dual Sided Cooling Compatible
? Compatible with existing Surface Mount Techniques
產(chǎn)品屬性
- 型號：
IRF6617TRPBF
- 功能描述：
MOSFET 30V 1 N-CH HEXFET 8.1mOhms 11nC
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶體管極性：
N-Channel
- 汲極/源極擊穿電壓：
650 V
- 閘/源擊穿電壓：
25 V
- 漏極連續(xù)電流：
130 A 電阻汲極/源極
- RDS（導通）：
0.014 Ohms
- 配置：
Single
- 安裝風格：
Through Hole
- 封裝/箱體：
Max247
- 封裝：
Tube
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
Infineon Technologies |
24+ |
原裝 |
5000 |
原裝正品,提供BOM配單服務(wù) |
詢價 | ||
Infineon/英飛凌 |
24+ |
MG-WDSON-5 |
25000 |
原裝正品,假一賠十! |
詢價 | ||
INFINEON/英飛凌 |
2021+ |
72000 |
十年專營原裝現(xiàn)貨,假一賠十 |
詢價 | |||
Infineon/英飛凌 |
21+ |
MG-WDSON-5 |
6820 |
只做原裝,質(zhì)量保證 |
詢價 | ||
Infineon/英飛凌 |
21+ |
MG-WDSON-5 |
6000 |
原裝現(xiàn)貨正品 |
詢價 | ||
Infineon/英飛凌 |
2023+ |
MG-WDSON-5 |
6000 |
全新原裝深圳倉庫現(xiàn)貨有單必成 |
詢價 | ||
IR |
24+ |
NA |
5825 |
公司原廠原裝現(xiàn)貨假一罰十!特價出售!強勢庫存! |
詢價 | ||
INFINEON/IR |
1907+ |
NA |
4800 |
20年老字號,原裝優(yōu)勢長期供貨 |
詢價 | ||
IR |
22+ |
DIRECTFET7 |
9600 |
原裝現(xiàn)貨,優(yōu)勢供應(yīng),支持實單! |
詢價 | ||
Infineon Technologies |
24+ |
DIRECTFET? ST |
30000 |
晶體管-分立半導體產(chǎn)品-原裝正品 |
詢價 |
