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2167

CustomerSpecifications

Construction 1)Conductor a)MaterialTinnedCopper,perASTMB-33andCID-A-A-59551 b)StrandingSolid c)Diameter0.005 2)BraidData a)NominalID5/32(.156) b)AWGofEnds36 c)NumberofCarriers24 d)NominalPercentCoverage95 e)TotalNumberofEnds240 f)Approx.Equiv.AWG12

ALPHAWIREAlpha Wire

阿爾法電線

AN2167

UsingtheSTPM01withashuntcurrentsensor

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體集團

BQ2167

Li-IonPowerGauge??ModulewithPackSupervisor

TITexas Instruments

德州儀器美國德州儀器公司

BQ2167B-

Li-IonPowerGauge??ModulewithPackSupervisor

TITexas Instruments

德州儀器美國德州儀器公司

BQ2167B-KT

Li-IonPowerGauge??ModulewithPackSupervisor

TITexas Instruments

德州儀器美國德州儀器公司

BQ2167B-XXX

Li-IonPowerGauge??ModulewithPackSupervisor

TITexas Instruments

德州儀器美國德州儀器公司

BQ2167LB-

Li-IonPowerGauge??ModulewithPackSupervisor

TITexas Instruments

德州儀器美國德州儀器公司

BQ2167LB-KT

Li-IonPowerGauge??ModulewithPackSupervisor

TITexas Instruments

德州儀器美國德州儀器公司

BQ2167LB-XXX

Li-IonPowerGauge??ModulewithPackSupervisor

TITexas Instruments

德州儀器美國德州儀器公司

DS2167

ADPCMProcessor

MaximMaxim Integrated Products

美信美信半導體

DS2167

ADPCMProcessor

DESCRIPTION TheDS2167andDS2168arededicateddigitalsignalprocessor(DSP)CMOSchipsoptimizedforAdaptiveDifferentialPulseCodeModulation(ADPCM)basedcompressionalgorithms.Thedeviceshalvethetransmissionbandwidthof“tollquality”voicefrom64Kto32Kbits/secondandareutiliz

DallasDallas Semiconductor

亞德諾亞德諾半導體

DS2167Q

ADPCMProcessor

DESCRIPTION TheDS2167andDS2168arededicateddigitalsignalprocessor(DSP)CMOSchipsoptimizedforAdaptiveDifferentialPulseCodeModulation(ADPCM)basedcompressionalgorithms.Thedeviceshalvethetransmissionbandwidthof“tollquality”voicefrom64Kto32Kbits/secondandareutiliz

DallasDallas Semiconductor

亞德諾亞德諾半導體

HAT2167H

SiliconNChannelPowerMOSFETPowerSwitching

Features ?Highspeedswitching ?Capableof4.5Vgatedrive ?Lowdrivecurrent ?Highdensitymounting ?Lowon-resistanceRDS(on)=4.2m?typ.(atVGS=10V)

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

HAT2167H-EL-E

SiliconNChannelPowerMOSFETPowerSwitching

Features ?Highspeedswitching ?Capableof4.5Vgatedrive ?Lowdrivecurrent ?Highdensitymounting ?Lowon-resistanceRDS(on)=4.2m?typ.(atVGS=10V)

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

HAT2167N

SiliconNChannelPowerMOSFETPowerSwitching

Features ?Highspeedswitching ?Capableof4.5Vgatedrive ?Lowdrivecurrent ?Highdensitymounting ?Lowon-resistanceRDS(on)=4.5m?typ.(atVGS=10V)

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

HAT2167N-EL-E

SiliconNChannelPowerMOSFETPowerSwitching

Features ?Highspeedswitching ?Capableof4.5Vgatedrive ?Lowdrivecurrent ?Highdensitymounting ?Lowon-resistanceRDS(on)=4.5m?typ.(atVGS=10V)

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

IPP-2167

OUTLINECOUP

IPP

Innovative Power Products, Inc.

IR2167

PFCBALLASTCONTROLIC

Description TheIR2167isafullyintegrated,fullyprotected600VballastcontrolICdesignedtodrivealltypesoffluorescentlamps.PFCcircuitryprovidesforhighPF,lowTHDandDCBusregulation.Externallyprogrammablefeaturessuchaspreheattime&frequency,ignitionrampcharacter

IRF

International Rectifier

IR2167S

PFCBALLASTCONTROLIC

Description TheIR2167isafullyintegrated,fullyprotected600VballastcontrolICdesignedtodrivealltypesoffluorescentlamps.PFCcircuitryprovidesforhighPF,lowTHDandDCBusregulation.Externallyprogrammablefeaturessuchaspreheattime&frequency,ignitionrampcharacter

IRF

International Rectifier

PIMXRT2167AVMAA

i.MXRT1170CrossoverProcessorsDataSheetforAutomotiveProducts

Features Thei.MXRT1170processorsarebasedonArmCortex?-M7Core?Platform,whichhasthefollowing features: ?TheArmCortex-M7CorePlatform: —32KBL1InstructionCacheand32KBL1DataCache —FloatingPointUnit(FPU)withsingle-precisionanddouble-precisionsupportofArmv7-M

nxpNXP Semiconductors

恩智浦恩智浦半導體公司

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更多SSM2167RM供應商 更新時間2025-1-14 16:20:00

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