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SSM3K329R

N-Channel30-V(D-S)MOSFET

FEATURES ?Halogen-freeAccordingtoIEC61249-2-21 Definition ?TrenchFET?PowerMOSFET ?100RgTested ?ComplianttoRoHSDirective2002/95/EC APPLICATIONS ?DC/DCConverter

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體(臺(tái)灣)有限公司

SSM3K329R

MOSFETsSiliconN-ChannelMOS

Applications ?PowerManagementSwitches ?High-SpeedSwitching Features (1)1.8-Vgatedrivevoltage. (2)Lowdrain-sourceon-resistance :RDS(ON)=289mΩ(max)(@VGS=1.8V) RDS(ON)=170mΩ(max)(@VGS=2.5V) RDS(ON)=126mΩ(max)(@VGS=4.0V)

TOSHIBAToshiba Semiconductor

東芝株式會(huì)社東芝

SSM3K329R

BipolarSmall-SignalTransistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBAToshiba Semiconductor

東芝株式會(huì)社東芝

SSM3K329R

Field-EffectTransistorSiliconN-ChannelMOSType

○PowerManagementSwitchApplications ○High-SpeedSwitchingApplications ?1.8-Vdrive ?LowON-resistance:RDS(ON)=289m?(max)(@VGS=1.8V) :RDS(ON)=170m?(max)(@VGS=2.5V) :RDS(ON)=126m?(max)(@VGS=4.0V)

TOSHIBAToshiba Semiconductor

東芝株式會(huì)社東芝

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N/A
54000
一級(jí)代理-主營優(yōu)勢(shì)-實(shí)惠價(jià)格-不悔選擇
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Toshiba
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NA
3109
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TOSHI
1742+
SOT23-3
98215
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22+
SOT-23
100971
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TOSHIBA
19+
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200000
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量大可定TOSHIBA
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49000
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TOSHIBA
2023+
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80000
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TOSHIBA/東芝
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更多SSM3K329R-VB供應(yīng)商 更新時(shí)間2025-1-18 11:06:00