首頁 >SSR3055LATM>規(guī)格書列表
零件編號(hào) | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
ADVANCEDPOWERMOSFET | SamsungSamsung semiconductor 三星三星半導(dǎo)體 | Samsung | ||
ADVANCEDPOWERMOSFET | SamsungSamsung semiconductor 三星三星半導(dǎo)體 | Samsung | ||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
N-Channel30-V(D-S)MOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導(dǎo)體微碧半導(dǎo)體(臺(tái)灣)有限公司 | VBSEMI | ||
N-ChannelLogicLevelEnhancementModeFieldEffectTransistor FEATURES ●SuperhighdensecelldesignforlowRDS(ON). ●Ruggedandreliable. ●TO-252andTO-251Package. | SamhopSamHop Microelectronics Corp. 三合微科三合微科股份有限公司 | Samhop | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES ●SuperhighdensecelldesignforlowRDS(ON). ●Ruggedandreliable. ●TO-252andTO-251Package. | SamhopSamHop Microelectronics Corp. 三合微科三合微科股份有限公司 | Samhop | ||
WLL&ISDN-TASUBSCRIBERLINEINTERFACECIRCUIT DESCRIPTION TheSTLC3055isaSLICdevicespecificallydesignedforWLL(WirelessLocalLoop)andISDNTerminalAdaptors.Oneofthedistinctivecharacteristicofthisdeviceistheabilitytooperatewithasinglesupplyvoltage(from+5.5Vto+15.8V)andselfgeneratethenegativebatterybymea | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán) | STMICROELECTRONICS | ||
WLL&ISDN-TASUBSCRIBERLINEINTERFACECIRCUIT Description TheSTLC3055NisaSLICdevicespecificallydesignedforwirelesslocalloop(WLL)andISDNterminaladaptors(ISDN-TA)andVoIPapplications.Oneofthedistinctivecharacteristicofthisdeviceistheabilitytooperatewithasinglesupplyvoltage(from5.5Vto12V)andselfge | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán) | STMICROELECTRONICS | ||
WLL&ISDN-TASUBSCRIBERLINEINTERFACECIRCUIT DESCRIPTION TheSTLC3055isaSLICdevicespecificallydesignedforWLL(WirelessLocalLoop)andISDNTerminalAdaptors.Oneofthedistinctivecharacteristicofthisdeviceistheabilitytooperatewithasinglesupplyvoltage(from+5.5Vto+15.8V)andselfgeneratethenegativebatterybymea | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán) | STMICROELECTRONICS | ||
WLL&ISDN-TASUBSCRIBERLINEINTERFACECIRCUIT DESCRIPTION TheSTLC3055isaSLICdevicespecificallydesignedforWLL(WirelessLocalLoop)andISDNTerminalAdaptors.Oneofthedistinctivecharacteristicofthisdeviceistheabilitytooperatewithasinglesupplyvoltage(from+5.5Vto+15.8V)andselfgeneratethenegativebatterybymea | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán) | STMICROELECTRONICS | ||
N-ChannelLogicLevelEnhancementModeFieldEffectTransistor FEATURES ●SuperhighdensecelldesignforlowRDS(ON). ●Ruggedandreliable. ●TO-252andTO-251Package. | SamhopSamHop Microelectronics Corp. 三合微科三合微科股份有限公司 | Samhop | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES ●SuperhighdensecelldesignforlowRDS(ON). ●Ruggedandreliable. ●TO-252andTO-251Package. | SamhopSamHop Microelectronics Corp. 三合微科三合微科股份有限公司 | Samhop | ||
SuperhighdensecelldesignforlowRDS(ON). | SamhopSamHop Microelectronics Corp. 三合微科三合微科股份有限公司 | Samhop | ||
MEDIUMPOWERLOGICLEVELTMOSFET1.5AMP60VOLTS MediumPowerFieldEffectTransistor N–ChannelEnhancementMode SiliconGateTMOSE–FET? SOT–223forSurfaceMount ThisadvancedE–FETisaTMOSpowerMOSFETdesignedtowithstandhighenergyintheavalancheandcommutationmodes.Thisdeviceisalsodesignedwithalowthresholdvoltagesoi | MotorolaMotorola, Inc 摩托羅拉加爾文制造公司 | Motorola | ||
iscSiliconNPNPowerTransistor | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
SiliconNPNPowerTransistors SiliconNPNPowerTransistors | KISEMICONDUCTORKwang Myoung I.S. CO.,LTD 明陽國際貿(mào)易廣州市明陽國際貿(mào)易有限公司 | KISEMICONDUCTOR | ||
SILICONPOWERTRANSISTORS PNPTIP2955 NPNTIP3055 TheTIP3055isaNPNepitaxial-basetransistorinTO3PNpackage.Itisintendedforpowerswitchingcircuits,seriesandshuntregulators,outputstageandhi-fiamplifiers.ThecomplementaryistheTIP2955ForPNPtypesVoltageandCurentareNegative.Complianceto | COMSET Comset Semiconductor | COMSET | ||
ComplementarySiliconPowerTransistors 15AMPEREPOWERTRANSISTORSCOMPLEMENTARYSILICON60VOLTS,90WATTS ?DCCurrentGain?hFE=20-70@IC=4.0Adc ?Collector?EmitterSaturationVoltage?VCE(sat)=1.1Vdc(Max)@IC=4.0Adc ?ExcellentSafeOperatingArea ?ThesearePb?FreeDevices* | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI | ||
SiliconNPNPowerTransistor DESCRIPTION ?ExcellentSafeOperatingArea ?DCCurrentGain-:hFE=20-70@IC=4A ?Collector-EmitterSaturationVoltage-:VCE(sat)=1.1V(Max)@IC=4A ?ComplementtoTypeTIP2955 APPLICATIONS ?Designedforgeneral-purposeswitchingandamplifierapplications. | NJSEMINew Jersey Semi-Conductor Products, Inc. 新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司 | NJSEMI |
供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫存 | 備注 | 價(jià)格 |
---|---|---|---|---|---|---|---|
SAMSUNG/三星 |
23+ |
TO-252 |
50000 |
全新原裝正品現(xiàn)貨,支持訂貨 |
詢價(jià) | ||
SAMSUNG/三星 |
2022 |
TO-252 |
80000 |
原裝現(xiàn)貨,OEM渠道,歡迎咨詢 |
詢價(jià) | ||
SAMSUNG/三星 |
22+ |
TO-252 |
100000 |
代理渠道/只做原裝/可含稅 |
詢價(jià) | ||
SAMSUNG/三星 |
23+ |
NA/ |
2255 |
優(yōu)勢(shì)代理渠道,原裝正品,可全系列訂貨開增值稅票 |
詢價(jià) | ||
SMG |
05+ |
原廠原裝 |
1011 |
只做全新原裝真實(shí)現(xiàn)貨供應(yīng) |
詢價(jià) | ||
SAMSUNG/三星 |
22+ |
TO-252 |
20000 |
保證原裝正品,假一陪十 |
詢價(jià) | ||
SMG |
24+ |
SMD |
6868 |
原裝現(xiàn)貨,可開13%稅票 |
詢價(jià) | ||
三星 |
24+ |
TO-252 |
5000 |
只做原裝公司現(xiàn)貨 |
詢價(jià) | ||
SAMSUNG/三星 |
96+ |
TO-252 |
12482 |
詢價(jià) | |||
SAMSUNG/三星 |
23+ |
TO-252 |
50000 |
全新原裝正品現(xiàn)貨,支持訂貨 |
詢價(jià) |
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