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SST1N20-C

Marking：1N20；Package：SOT-26；N-Ch Enhancement Mode Power MOSFET

SECOSSeCoS Halbleitertechnologie GmbH

喜可士喜可士股份有限公司

D1N20

GeneralPurposeRectifiers(200V1A)

FEATURES ●Highvoltage ●Highreliabilitywithsuperiormoistureresistance ●5mmpitchmountingapplicable APPLICATION ●ConventionalRectification ●Powersource(PowerSupply) ●HomeAppliances,OfficeEquipment ●Telecommunication,FactoryAutomation

SHINDENGENShindengen Electric Mfg.Co.Ltd

日本新電元工業(yè)株式會(huì)社

N1N20

N-channel200V,1.2?,1A,SOT-223MESHOVERLAY?PowerMOSFET

Description ThisdeviceisanN-channelPowerMOSFET developedusingthelatesthighvoltageMESH OVERLAY?process.ThenewpatentedSTrip layoutcoupledwiththecompany’sproprietary edgeterminationstructure,makesitsuitablein convertersforlightingapplications. Features ■100a

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

RFL1N20

1A,180Vand200V,3.65Ohm,N-ChannelPowerMOSFETs

Description TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistorsdesignedforapplicationssuchasswitchingregulators,switchingconverters,motordrivers,relaydriversanddriversforhighpowerbipolarswitchingtransistorsrequiringhighspeedandlowgatedrive

Intersil

Intersil Corporation

RFL1N20

1A,180Vand200V,3.65Ohm,N-ChannelPowerMOSFETs

Description TheseareN-channelenhancementmodesilicon-gatepowerfield-effecttransistorsdesignedforapplicationssuchasswitchingregulators,switchingconverters,motordrivers,relaydriversanddriversforhigh-powerbipolarswitchingtransistorsrequiringhighspeedandlowgate-drive

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司

RFL1N20L

N-ChannelLogicLevelPowerField-EffectTransistors(L2FET)

TheRFL1N18LandRFL1N20LandtheRFP2N18LandRFP2N20Laren-channelenhancement-modesilicon-gatepower,field-effecttransistorsspecificallydesignedforusewithlogiclevel(5volt)drivingsourcesInapplicationssuchasprogrammablecontrollers,automotiveswitching,andsolenoiddrivers.

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司

RFL1N20L

N-ChannelLogicLevelPowerField-EffectTransistors(L2FET)

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司

STN1N20

N-channel200V,1.2?,1A,SOT-223MESHOVERLAY?PowerMOSFET

Description ThisdeviceisanN-channelPowerMOSFET developedusingthelatesthighvoltageMESH OVERLAY?process.ThenewpatentedSTrip layoutcoupledwiththecompany’sproprietary edgeterminationstructure,makesitsuitablein convertersforlightingapplications. Features ■100a

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STN1N20

N-CHANNEL200V-1.2ohm-1A-SOT-223POWERMOSTRANSISTOR

N-CHANNEL200V-1.2?-1A-SOT-223POWERMOSTRANSISTOR ■TYPICALRDS(on)=1.2? ■AVALANCHERUGGEDTECHNOLOGY ■SOT-223CANBEWAVEORREFLOWSOLDERED ■AVAILABLEINTAPEANDREELONREQUEST ■150°COPERATINGTEMPERATURE ■APPLICATIONORIENTEDCHARACTERIZATION APPLICATIONS ■HARDDI

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

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更多SST1N20-C供應(yīng)商 更新時(shí)間2025-1-30 16:06:00

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