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RFL1N20中文資料Intersil數(shù)據(jù)手冊PDF規(guī)格書

RFL1N20
廠商型號

RFL1N20

功能描述

1A, 180V and 200V, 3.65 Ohm, N-Channel Power MOSFETs

文件大小

43.36 Kbytes

頁面數(shù)量

5

生產(chǎn)廠商 Intersil Corporation
企業(yè)簡稱

Intersil

中文名稱

Intersil Corporation官網(wǎng)

原廠標識
數(shù)據(jù)手冊

下載地址一下載地址二到原廠下載

更新時間

2025-2-15 18:26:00

RFL1N20規(guī)格書詳情

Description

These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits.

Features

? 1A, 180V and 200V

? rDS(ON) = 3.65?

? SOA is Power Dissipation Limited

? Nanosecond Switching Speeds

? Linear Transfer Characteristics

? High Input Impedance

? Majority Carrier Device

? Related Literature

- TB334 “Guidelines for Soldering Surface Mount Components to PC Boards”

產(chǎn)品屬性

  • 型號:

    RFL1N20

  • 制造商:

    INTERSIL

  • 制造商全稱:

    Intersil Corporation

  • 功能描述:

    1A, 180V and 200V, 3.65 Ohm, N-Channel Power MOSFETs

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