SST25WF080BT-40I/SN集成電路（IC）的存儲器規(guī)格書PDF中文資料

SST25WF080BT-40I/SN屬于集成電路（IC）的存儲器。由微芯科技股份有限公司制造生產(chǎn)的SST25WF080BT-40I/SN存儲器存儲器是集成電路上用作數(shù)據(jù)存儲設備的半導體器件。這些器件分為非易失性或易失性兩種，格式包括 CBRAM、DRAM、EEPROM、EERAM、EPROM、閃存、FRAM、NVSRAM、PCM (PRAM)、PSRAM、RAM 和 SRAM。這些器件的存儲容量為 64 b 至 6 Tb 不等，接口有 I2C、MMC、并行、eMMC、串行、單線、SPI、UFS、Xccela 總線和 1-線。

Product Description

SST25WF080B is a member of the Serial Flash 25

Series family and feature a four-wire, SPI-compatible

interface that allows for a low pin-count package which

occupies less board space and ultimately lowers total

system costs. SPI serial flash memory is manufactured

with proprietary, high-performance CMOS

SuperFlash? technology. The split-gate cell design and

thick-oxide tunneling injector attain better reliability and

manufacturability compared with alternate approaches.

This Serial Flash significantly improve performance

and reliability, while lowering power consumption. The

device writes (Program or Erase) with a single power

supply of 1.65V-1.95V. The total energy consumed is a

function of the applied voltage, current, and time of

application. Since for any given voltage range, the

SuperFlash technology uses less current to program

and has a shorter erase time, the total energy consumed

during any Erase or Program operation is less

than alternative flash memory technologies.

Features

? Single Voltage Read and Write Operations

- 1.65V-1.95V

? Serial Interface Architecture

- SPI Compatible: Mode 0 and Mode 3

? High-Speed Clock Frequency

- 40MHz

? Dual Input/Output Support

- Fast-Read Dual-Output Instruction (3BH)

- Fast-Read Dual I/O Instruction (BBH)

? Superior Reliability

- Endurance: 100,000 Cycles

- Greater than 20 years Data Retention

? Ultra-Low Power Consumption:

- Active Read current: 4 mA (typical)

- Standby current: 7 μA (typical)

- Deep Power-down current: 2 μA (typical)

? Flexible Erase Capability

- Uniform 4-Kbyte sectors

- Uniform 64-Kbyte overlay blocks

? Page Program Mode

- 256 bytes/Page

? Fast Erase and Page-Program:

- Chip Erase time: 500 ms (typical)

- Sector Erase time: 40 ms (typical)

- Block Erase time: 80 ms (typical)

- Page Program time: 0.8 ms/ 256 bytes (typical)

? End-of-Write Detection

- Software polling the BUSY bit in STATUS Register

? Hold Pin (HOLD#)

- Suspend a serial sequence without

deselecting the device

? Write Protection (WP#)

- Enables/Disables the Lock-Down function of

the STATUS register

? Software Write Protection

- Write protection through Block-Protection bits

in STATUS register

? Temperature Range

- Industrial: -40°C to +85°C

- Extended: -40°C to +125°C

- AECQ-100 Qualified

? All devices are RoHS compliant