首頁>SST36VF1601E>規(guī)格書詳情
SST36VF1601E中文資料SST數(shù)據(jù)手冊PDF規(guī)格書
相關(guān)芯片規(guī)格書
更多- SST36VF1601
- SST36VF1601-70-4C-BK
- SST36VF1601-70-4E-BK
- SST36VF1601-70-4E-EK
- SST36VF1601-70-4C-EK
- SST36VF1601C-70-4I-B3KE
- SST36VF1601C-70-4I-EKE
- SST36VF1601C-70-4C-EKE
- SST36VF1601C-70-4C-B3KE
- SST36VF1601-70-4E-EK
- SST36VF1601-70-4E-BK
- SST36VF1601C
- SST36VF1601-70-4C-EK
- SST36VF1601-70-4C-BK
- SST36VF1601-90-4C-BK
- SST36VF1601
- SST36VF1601-90-4E-BK
- SST3585_10
SST36VF1601E規(guī)格書詳情
PRODUCT DESCRIPTION
The SST36VF1601E and SST36VF1602E are 1M x16 or 2M x8 CMOS Concurrent Read/Write Flash Memory manufactured with SST’s proprietary, high performance CMOS SuperFlash memory technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches. The devices write (Program or Erase) with a 2.7-3.6V power supply and conform to JEDEC standard pinouts for x8/x16 memories.
FEATURES:
? Organized as 1M x16 or 2M x8
? Dual Bank Architecture for Concurrent Read/Write Operation
– 16 Mbit Bottom Sector Protection
- SST36VF1601E: 12 Mbit + 4 Mbit
– 16 Mbit Top Sector Protection
- SST36VF1602E: 4 Mbit + 12 Mbit
? Single 2.7-3.6V for Read and Write Operations
? Superior Reliability
– Endurance: 100,000 cycles (typical)
– Greater than 100 years Data Retention
? Low Power Consumption:
– Active Current: 6 mA typical
– Standby Current: 4 μA typical
– Auto Low Power Mode: 4 μA typical
? Hardware Sector Protection/WP# Input Pin
– Protects the 4 outermost sectors (8 KWord) in the larger bank by driving WP# low and unprotects by driving WP# high
? Hardware Reset Pin (RST#)
– Resets the internal state machine to reading array data
? Byte# Pin
– Selects 8-bit or 16-bit mode
? Sector-Erase Capability
– Uniform 2 KWord sectors
? Chip-Erase Capability
? Block-Erase Capability
– Uniform 32 KWord blocks
? Erase-Suspend / Erase-Resume Capabilities
? Security ID Feature
– SST: 128 bits
– User: 128 bits
? Fast Read Access Time
– 70 ns
? Latched Address and Data
? Fast Erase and Program (typical):
– Sector-Erase Time: 18 ms
– Block-Erase Time: 18 ms
– Chip-Erase Time: 35 ms
– Program Time: 7 μs
? Automatic Write Timing
– Internal VPP Generation
? End-of-Write Detection
– Toggle Bit
– Data# Polling
– Ready/Busy# pin
? CMOS I/O Compatibility
? Conforms to Common Flash Memory Interface (CFI)
? JEDEC Standards
– Flash EEPROM Pinouts and command sets
? Packages Available
– 48-ball TFBGA (6mm x 8mm)
– 48-lead TSOP (12mm x 20mm)
? All non-Pb (lead-free) devices are RoHS compliant
產(chǎn)品屬性
- 型號:
SST36VF1601E
- 功能描述:
閃存 16M(2Mx8 or 1Mx16) 70ns 2.7-3.6V Comm
- RoHS:
否
- 制造商:
ON Semiconductor
- 數(shù)據(jù)總線寬度:
1 bit
- 存儲類型:
Flash
- 存儲容量:
2 MB
- 結(jié)構(gòu):
256 K x 8
- 接口類型:
SPI
- 電源電壓-最大:
3.6 V
- 電源電壓-最?。?/span>
2.3 V
- 最大工作電流:
15 mA
- 工作溫度:
- 40 C to + 85 C
- 安裝風(fēng)格:
SMD/SMT
- 封裝:
Reel
供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
SST |
22+ |
TSOP |
12500 |
原裝 低價 實(shí)單必成 |
詢價 | ||
SST |
BGA |
699839 |
集團(tuán)化配單-有更多數(shù)量-免費(fèi)送樣-原包裝正品現(xiàn)貨-正規(guī) |
詢價 | |||
SST |
07+ |
BGA |
880000 |
明嘉萊只做原裝正品現(xiàn)貨 |
詢價 | ||
SST原裝特價出售 |
22+23+ |
TSOP48 |
18574 |
絕對原裝正品全新進(jìn)口深圳現(xiàn)貨 |
詢價 | ||
SST |
589220 |
16余年資質(zhì) 絕對原盒原盤 更多數(shù)量 |
詢價 | ||||
SST |
22+ |
TSOP48 |
3000 |
原裝正品,支持實(shí)單 |
詢價 | ||
SST |
23+ |
TSOP |
3000 |
全新原裝、誠信經(jīng)營、公司現(xiàn)貨銷售! |
詢價 | ||
SST |
BGA |
56520 |
一級代理 原裝正品假一罰十價格優(yōu)勢長期供貨 |
詢價 | |||
SST |
12+ |
TSOP |
10400 |
原裝現(xiàn)貨/特價 |
詢價 | ||
SST |
24+ |
BGA |
65300 |
一級代理/放心購買! |
詢價 |