SST39V010-70-4C-NHE中文資料微芯科技數(shù)據(jù)手冊PDF規(guī)格書

Features

? Organized as 128K x8 / 256K x8 / 512K x8

? Single Voltage Read and Write Operations

– 3.0-3.6V for SST39LF010/020/040

– 2.7-3.6V for SST39VF010/020/040

? Superior Reliability

– Endurance: 100,000 Cycles (typical)

– Greater than 100 years Data Retention

? Low Power Consumption

(typical values at 14 MHz)

– Active Current: 5 mA (typical)

– Standby Current: 1 μA (typical)

? Sector-Erase Capability

– Uniform 4 KByte sectors

? Fast Read Access Time:

– 55 ns for SST39LF010/020/040

– 70 ns for SST39VF010/020/040

? Latched Address and Data

? Fast Erase and Byte-Program:

– Sector-Erase Time: 18 ms (typical)

– Chip-Erase Time: 70 ms (typical)

– Byte-Program Time: 14 μs (typical)

– Chip Rewrite Time:

2 seconds (typical) for SST39LF/VF010

4 seconds (typical) for SST39LF/VF020

8 seconds (typical) for SST39LF/VF040

? Automatic Write Timing

– Internal VPP Generation

? End-of-Write Detection

– Toggle Bit

– Data# Polling

? CMOS I/O Compatibility

? JEDEC Standard

– Flash EEPROM Pinouts and command sets

? Packages Available

– 32-lead PLCC

– 32-lead TSOP (8mm x 14mm)

? All devices are RoHS compliant