STAC4932F1MR中文資料意法半導體數(shù)據(jù)手冊PDF規(guī)格書

Features

? Improved ruggedness V(BR)DSS > 200 V

? Load mismatch 65:1 all phases @ 350 W - 50 V - 123 MHz

? POUT = 450 W typ. with 24 dB gain at 123 MHz

? In compliance with the 2002/95/EC European directive

? Moisture resistant package specifically designed to operate in extreme

environments

? Drying recommendation before soldering:

– 48 hrs at 125 °C

? Back finishing:

– Sn96.5/Ag3/Cu0.5 solder

– Base flatness < 0.2 mm

– Gold content < 0.1

– Minimum solder thickness > 2 μm

Description

The STAC4932F1MR is an N-channel MOS fieldeffect RF power transistor. It is

intended for use in 50 V / 80 V ISM applications up to 250 MHz.

The STAC4932F1MR benefits from the latest generation of environmentally designed

packaging, ruggedized against cyclic high moisture operation and severe storage

conditions.

This device contains Beryllium oxide (BeO), which is hazardous if inhaled or

ingested.