STB6NB50中文資料意法半導體數(shù)據(jù)手冊PDF規(guī)格書
STB6NB50規(guī)格書詳情
DESCRIPTION
Using the latest high voltage MESH OVERLAY? process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics.
■ TYPICAL RDS(on) = 1.35 ?
■ EXTREMELY HIGH dv/dt CAPABILITY
■ 100 AVALANCHE TESTED
■ VERY LOW INTRINSIC CAPACITANCES
■ GATE CHARGE MINIMIZED
APPLICATIONS
■ HIGH CURRENT, HIGH SPEED SWITCHING
■ SWITCH MODE POWER SUPPLIES (SMPS)
■ DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVE
產(chǎn)品屬性
- 型號：
STB6NB50
- 功能描述：
MOSFET N-Ch 500 Volt 6 Amp
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶體管極性：
N-Channel
- 汲極/源極擊穿電壓：
650 V
- 閘/源擊穿電壓：
25 V
- 漏極連續(xù)電流：
130 A 電阻汲極/源極
- RDS（導通）：
0.014 Ohms
- 配置：
Single
- 安裝風格：
Through Hole
- 封裝/箱體：
Max247
- 封裝：
Tube
| 供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
ST/意法 |
23+ |
TO-263 |
11200 |
原廠授權(quán)一級代理、全球訂貨優(yōu)勢渠道、可提供一站式BO |
詢價 | ||
ST/意法 |
22+ |
TO-263 |
20000 |
保證原裝正品,假一陪十 |
詢價 | ||
ST/意法 |
23+ |
TO-263 |
50000 |
全新原裝正品現(xiàn)貨,支持訂貨 |
詢價 | ||
ST |
TO 263 |
93480 |
集團化配單-有更多數(shù)量-免費送樣-原包裝正品現(xiàn)貨-正規(guī) |
詢價 | |||
ST |
06+ |
TO-263 |
8000 |
原裝庫存 |
詢價 | ||
24+ |
N/A |
2500 |
詢價 | ||||
ST |
1709+ |
TO-263/D2-PAK |
32500 |
普通 |
詢價 | ||
ST |
22 |
TO-263 |
25000 |
3月31原裝,微信報價 |
詢價 | ||
ST/意法 |
23+ |
TO |
10000 |
公司只做原裝正品 |
詢價 | ||
ST |
TO-263 |
22+ |
6000 |
十年配單,只做原裝 |
詢價 |
