首頁 >STB80NF55-08>規(guī)格書列表
零件編號 | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
STB80NF55-08 | N-CHANNEL 55V - 0.0065 ohm - 80A D2PAK/I2PAK/TO-220 STripFET??II POWER MOSFET Description ThisPowerMOSFETisthelatestdevelopmentofSTMicroelectronicsunique“singlefeaturesize”strip-basedprocess.Theresultingtransistorshowsextremelyhighpackingdensityforlowonresistance,ruggedavalancecharacteristicsandlesscriticalalignmentstepsthereforearema | STMICROELECTRONICSSTMicroelectronics 意法半導體意法半導體集團 | STMICROELECTRONICS | |
STB80NF55-08 | N-channel 55 V - 0.0065 廓 - 80 A - TO-220 - D2PAK - TO-247 STripFET??Power MOSFET | STMICROELECTRONICSSTMicroelectronics 意法半導體意法半導體集團 | STMICROELECTRONICS | |
N-CHANNEL 55V - 0.0065 ohm - 80A D2PAK/I2PAK/TO-220 STripFET??II POWER MOSFET Description ThisPowerMOSFETisthelatestdevelopmentofSTMicroelectronicsunique“singlefeaturesize”strip-basedprocess.Theresultingtransistorshowsextremelyhighpackingdensityforlowonresistance,ruggedavalancecharacteristicsandlesscriticalalignmentstepsthereforearema | STMICROELECTRONICSSTMicroelectronics 意法半導體意法半導體集團 | STMICROELECTRONICS | ||
Automotive-grade N-channel 55 V, 6.5 m typ.,80 A STripFETTM Power MOSFETs in D2PAK and TO-220 packages Features ?Designedforautomotiveapplicationsand AEC-Q101qualified ?100avalanchetested ?Lowinputcapacitanceandgatecharge ?Lowgateinputresistance Description ThesePowerMOSFETshavebeendeveloped usingSTMicroelectronics’uniqueSTripFET process,whichisspecifically | STMICROELECTRONICSSTMicroelectronics 意法半導體意法半導體集團 | STMICROELECTRONICS | ||
N-channel 55 V, 0.0065 廓, 80 A, TO-220, D2PAK, TO-247 STripFET??Power MOSFET Description ThisPowerMOSFETisthelatestdevelopmentofSTMicroelectronicsunique“singlefeaturesize”strip-basedprocess.Theresultingtransistorshowsextremelyhighpackingdensityforlowonresistance,ruggedavalancecharacteristicsandlesscriticalalignmentstepsthereforearema | STMICROELECTRONICSSTMicroelectronics 意法半導體意法半導體集團 | STMICROELECTRONICS | ||
N-channel 55 V - 0.0065 廓 - 80 A - TO-220 - D2PAK - TO-247 STripFET??Power MOSFET | STMICROELECTRONICSSTMicroelectronics 意法半導體意法半導體集團 | STMICROELECTRONICS | ||
N-channel55V-0.0065廓-80A-TO-220-D2PAK-TO-247STripFET??PowerMOSFET | STMICROELECTRONICSSTMicroelectronics 意法半導體意法半導體集團 | STMICROELECTRONICS | ||
N-Channel60V(D-S)MOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導體微碧半導體(臺灣)有限公司 | VBSEMI | ||
N-channel55V,0.0065廓,80A,TO-220,D2PAK,TO-247STripFET??PowerMOSFET Description ThisPowerMOSFETisthelatestdevelopmentofSTMicroelectronicsunique“singlefeaturesize”strip-basedprocess.Theresultingtransistorshowsextremelyhighpackingdensityforlowonresistance,ruggedavalancecharacteristicsandlesscriticalalignmentstepsthereforearema | STMICROELECTRONICSSTMicroelectronics 意法半導體意法半導體集團 | STMICROELECTRONICS | ||
N-CHANNEL55V-0.0065ohm-80AD2PAK/I2PAK/TO-220STripFET??IIPOWERMOSFET Description ThisPowerMOSFETisthelatestdevelopmentofSTMicroelectronicsunique“singlefeaturesize”strip-basedprocess.Theresultingtransistorshowsextremelyhighpackingdensityforlowonresistance,ruggedavalancecharacteristicsandlesscriticalalignmentstepsthereforearema | STMICROELECTRONICSSTMicroelectronics 意法半導體意法半導體集團 | STMICROELECTRONICS | ||
Automotive-gradeN-channel55V,6.5mtyp.,80ASTripFETTMPowerMOSFETsinD2PAKandTO-220packages Features ?Designedforautomotiveapplicationsand AEC-Q101qualified ?100avalanchetested ?Lowinputcapacitanceandgatecharge ?Lowgateinputresistance Description ThesePowerMOSFETshavebeendeveloped usingSTMicroelectronics’uniqueSTripFET process,whichisspecifically | STMICROELECTRONICSSTMicroelectronics 意法半導體意法半導體集團 | STMICROELECTRONICS | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=80A@TC=25℃ ·DrainSourceVoltage-VDSS=55V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=8.0mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司 | ISC | ||
N-channel55V,0.0065廓,80A,TO-220,D2PAK,TO-247STripFET??PowerMOSFET Description ThisPowerMOSFETisthelatestdevelopmentofSTMicroelectronicsunique“singlefeaturesize”strip-basedprocess.Theresultingtransistorshowsextremelyhighpackingdensityforlowonresistance,ruggedavalancecharacteristicsandlesscriticalalignmentstepsthereforearema | STMICROELECTRONICSSTMicroelectronics 意法半導體意法半導體集團 | STMICROELECTRONICS | ||
N-channel55V-0.0065廓-80A-TO-220-D2PAK-TO-247STripFET??PowerMOSFET | STMICROELECTRONICSSTMicroelectronics 意法半導體意法半導體集團 | STMICROELECTRONICS | ||
N-CHANNEL55V-0.0065ohm-80ATO-247STripFET??POWERMOSFET Description ThisPowerMOSFETisthelatestdevelopmentofSTMicroelectronicsunique“singlefeaturesize”strip-basedprocess.Theresultingtransistorshowsextremelyhighpackingdensityforlowonresistance,ruggedavalancecharacteristicsandlesscriticalalignmentstepsthereforearema | STMICROELECTRONICSSTMicroelectronics 意法半導體意法半導體集團 | STMICROELECTRONICS | ||
N-channel55V-0.0065廓-80A-TO-220-D2PAK-TO-247STripFET??PowerMOSFET | STMICROELECTRONICSSTMicroelectronics 意法半導體意法半導體集團 | STMICROELECTRONICS |
詳細參數(shù)
- 型號:
STB80NF55-08
- 制造商:
STMICROELECTRONICS
- 制造商全稱:
STMicroelectronics
- 功能描述:
N-CHANNEL 55V - 0.0065 ohm - 80A D2PAK/I2PAK/TO-220 STripFET⑩ II POWER MOSFET
供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
ST |
23+ |
TO-263 |
5000 |
原裝正品,假一罰十 |
詢價 | ||
ST |
24+ |
N/A |
90000 |
一級代理商進口原裝現(xiàn)貨、假一罰十價格合理 |
詢價 | ||
ST |
2020+ |
TO-263 |
80000 |
只做自己庫存,全新原裝進口正品假一賠百,可開13%增 |
詢價 | ||
ST |
1709+ |
TO-263/D2-PAK |
32500 |
普通 |
詢價 | ||
ST/意法 |
21+ |
TO-263 |
30000 |
只做正品原裝現(xiàn)貨 |
詢價 | ||
STM |
2022 |
TO263 |
1120 |
詢價 | |||
ST |
23+ |
TO-263 |
4500 |
全新原裝、誠信經(jīng)營、公司現(xiàn)貨銷售! |
詢價 | ||
ST |
22 |
TO-263 |
25000 |
3月31原裝,微信報價 |
詢價 | ||
ST |
TO-263 |
699839 |
集團化配單-有更多數(shù)量-免費送樣-原包裝正品現(xiàn)貨-正規(guī) |
詢價 | |||
ST |
23+ |
TO-263 |
25000 |
原廠/代理渠道 價格優(yōu)勢 |
詢價 |
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