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STB9NB50

N - CHANNEL ENHANCEMENT MODE Power MESH MOSFET

N-CHANNELENHANCEMENTMODEPowerMESH?MOSFET ■TYPICALRDS(on)=0.75? ■EXTREMELYHIGHdv/dtCAPABILITY ■AVALANCHERUGGEDTECHNOLOGY ■100AVALANCHETESTED ■REPETITIVEAVALANCHEDATAAT100°C ■VERYLOWINTRINSICCAPACITANCE ■GATECHARGEMINIMIZED ■LOWLEAKAGECURRENT ■APPLICATIO

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

P9NB50

N-Channel500V(D-S)PowerMOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺灣）有限公司

P9NB50FP

N-CHANNEL500V-0.75ohm-8.6ATO-220/TO-220FPPowerMeshMOSFET

DESCRIPTION UsingthelatesthighvoltageMESHOVERLAY?process,STMicroelectronicshasdesignedanadvancedfamilyofpowerMOSFETswithoutstandingperformances.ThenewpatentpendingstriplayoutcoupledwiththeCompany’sproprieratyedgeterminationstructure,givesthelowestRDS(on)pera

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STP9NB50

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=8.6A@TC=25℃ ·DrainSourceVoltage-VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.85Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

STP9NB50

N-CHANNEL500V-0.75ohm-8.6ATO-220/TO-220FPPowerMeshMOSFET

DESCRIPTION UsingthelatesthighvoltageMESHOVERLAY?process,STMicroelectronicshasdesignedanadvancedfamilyofpowerMOSFETswithoutstandingperformances.ThenewpatentpendingstriplayoutcoupledwiththeCompany’sproprieratyedgeterminationstructure,givesthelowestRDS(on)pera

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STP9NB50FP

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=4.9A@TC=25℃ ·DrainSourceVoltage-VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.85Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

STP9NB50FP

N-CHANNEL500V-0.75ohm-8.6ATO-220/TO-220FPPowerMeshMOSFET

DESCRIPTION UsingthelatesthighvoltageMESHOVERLAY?process,STMicroelectronicshasdesignedanadvancedfamilyofpowerMOSFETswithoutstandingperformances.ThenewpatentpendingstriplayoutcoupledwiththeCompany’sproprieratyedgeterminationstructure,givesthelowestRDS(on)pera

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

TSM9NB50

500VN-ChannelPowerMOSFET

TSCTaiwan Semiconductor Company, Ltd

臺灣半導(dǎo)體臺灣半導(dǎo)體股份有限公司

詳細(xì)參數(shù)

  • 型號：

    STB9NB50

  • 功能描述：

    MOSFET N-Ch 500 Volt 9 Amp

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導(dǎo)通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風(fēng)格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

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23+
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ST
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350000
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2987
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1709+
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30000
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100500
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4500
全新原裝、誠信經(jīng)營、公司現(xiàn)貨銷售!
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更多STB9NB50供應(yīng)商 更新時(shí)間2025-1-12 9:00:00

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