零件編號 | 下載 訂購 | 功能描述/絲印 | 制造商 上傳企業(yè) | LOGO |
---|---|---|---|---|
N-CHANNEL 24V - 0.0044 ohm - 80A DPAK STripFET??III POWER MOSFET Description ThisdeviceutilizesthelatestadvanceddesignrulesofST’sproprietarySTripFET?technology.ThisissuitablefotthemostdemandingDC-DCconverterapplicationwherehighefficiencyistobeachieved. Generalfeatures ■RDS(on)*Qgindustry’sbenchmark ■Conductionlos | STMICROELECTRONICSSTMicroelectronics 意法半導體意法半導體集團 | STMICROELECTRONICS | ||
Extremely low gate charge Description ThesedevicesareN-channelPowerMOSFETsdevelopedusinganewgenerationofMDmesh?technology:MDmeshIIPlus?lowQg.TheserevolutionaryPowerMOSFETsassociateaverticalstructuretothecompanysstriplayouttoyieldoneoftheworldsloweston-resistanceandgatecharge.They | STMICROELECTRONICSSTMicroelectronics 意法半導體意法半導體集團 | STMICROELECTRONICS | ||
isc N-Channel MOSFET Transistor FEATURES ·DrainCurrent-ID=7.0A@TC=25℃ ·DrainSourceVoltage-VDSS=650V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.68Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司 | ISC | ||
N-channel 650 V, 0.43 typ., 9 A MDmesh V Power MOSFET in D2PAK, DPAK, TO-220FP, TO-220 and IPAK packages Description ThesedevicesareN-channelMDmesh?VPowerMOSFETsbasedonaninnovativeproprietaryverticalprocesstechnology,whichiscombinedwithSTMicroelectronics’well-knownPowerMESH?horizontallayoutstructure.Theresultingproducthasextremelylowonresistance,whichisunmatcheda | STMICROELECTRONICSSTMicroelectronics 意法半導體意法半導體集團 | STMICROELECTRONICS | ||
N-channel 650 V, 0.43 廓 typ., 9 A MDmesh??V Power MOSFET in D2PAK, DPAK, TO-220FP, TO-220 and IPAK packages Description ThesedevicesareN-channelMDmesh?VPowerMOSFETsbasedonaninnovativeproprietaryverticalprocesstechnology,whichiscombinedwithSTMicroelectronics’well-knownPowerMESH?horizontallayoutstructure.Theresultingproducthasextremelylowonresistance,whichisunmatcheda | STMICROELECTRONICSSTMicroelectronics 意法半導體意法半導體集團 | STMICROELECTRONICS | ||
N-channel 500 V, 0.4, 8.5 A MDmesh II Power MOSFET in DPAK, TO-220FP and TO-220 Description ThesedevicesaremadeusingthesecondgenerationofMDmesh?technology.ThisrevolutionaryPowerMOSFETassociatesanewverticalstructuretothecompany’sstriplayouttoyieldoneoftheworld’sloweston-resistanceandgatecharge.Itisthereforesuitableforthemostdemanding | STMICROELECTRONICSSTMicroelectronics 意法半導體意法半導體集團 | STMICROELECTRONICS | ||
N-channel 500 V, 0.4 廓, 8.5 A MDmesh??II Power MOSFET in DPAK, TO-220FP and TO-220 Description ThesedevicesaremadeusingthesecondgenerationofMDmesh?technology.ThisrevolutionaryPowerMOSFETassociatesanewverticalstructuretothecompany’sstriplayouttoyieldoneoftheworld’sloweston-resistanceandgatecharge.Itisthereforesuitableforthemostdemanding | STMICROELECTRONICSSTMicroelectronics 意法半導體意法半導體集團 | STMICROELECTRONICS | ||
N-channel 600V-0.37ohm-10A-TO-220-TO-220FP- IPAK-DPAK Second generation MDmesh Power MOSFET Description ThisseriesofdevicesisdesignedusingthesecondgenerationofMDmesh?technology.ThisrevolutionaryPowerMOSFETassociatesanewverticalstructuretothecompany’sstriplayouttoyieldoneoftheworld’sloweston-resistanceandgatecharge.Itisthereforesuitableforthemo | STMICROELECTRONICSSTMicroelectronics 意法半導體意法半導體集團 | STMICROELECTRONICS | ||
N-channel 600V - 0.37廓 - 10A - TO-220/FP- I/I2PAK - DPAK second generation MDmesh??Power MOSFET Description ThisseriesofdevicesisdesignedusingthesecondgenerationofMDmesh?technology.ThisrevolutionaryPowerMOSFETassociatesanewverticalstructuretothecompany’sstriplayouttoyieldoneoftheworld’sloweston-resistanceandgatecharge.Itisthereforesuitableforthemo | STMICROELECTRONICSSTMicroelectronics 意法半導體意法半導體集團 | STMICROELECTRONICS | ||
N-channel 600 V, 0.37 廓, 10 A MDmesh??II Power MOSFET TO-220, TO-220FP, I2PAK, IPAK, DPAK, D2PAK Description ThisseriesofdevicesisdesignedusingthesecondgenerationofMDmesh?technology.ThisrevolutionaryPowerMOSFETassociatesanewverticalstructuretothecompany’sstriplayouttoyieldoneoftheworld’sloweston-resistanceandgatecharge.Itisthereforesuitableforthemo | STMICROELECTRONICSSTMicroelectronics 意法半導體意法半導體集團 | STMICROELECTRONICS |
詳細參數(shù)
- 型號:
STD11
- 功能描述:
MOSFET N-Ch 24 Volt 80 Amp
- RoHS:
否
- 制造商:
STMicroelectronics
- 晶體管極性:
N-Channel
- 汲極/源極擊穿電壓:
650 V
- 閘/源擊穿電壓:
25 V
- 漏極連續(xù)電流:
130 A 電阻汲極/源極
- RDS(導通):
0.014 Ohms
- 配置:
Single
- 安裝風格:
Through Hole
- 封裝/箱體:
Max247
- 封裝:
Tube
供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
ST |
24+ |
TO252DPAK |
8866 |
詢價 | |||
ST |
2015+ |
TO252D |
12500 |
全新原裝,現(xiàn)貨庫存長期供應 |
詢價 | ||
ST |
1822+ |
TO-252 |
9852 |
只做原裝正品假一賠十為客戶做到零風險!! |
詢價 | ||
ST |
24+ |
TO-252 |
90000 |
一級代理商進口原裝現(xiàn)貨、假一罰十價格合理 |
詢價 | ||
ST |
18+ |
TO-252 |
41200 |
原裝正品,現(xiàn)貨特價 |
詢價 | ||
ST |
24+ |
TO-252 |
16800 |
絕對原裝進口現(xiàn)貨,假一賠十,價格優(yōu)勢!? |
詢價 | ||
APTMICROSEMI |
23+ |
TO-220K |
69820 |
終端可以免費供樣,支持BOM配單! |
詢價 | ||
ST |
1709+ |
TO-252/D- |
32500 |
普通 |
詢價 | ||
ST/意法 |
21+ |
TO-252(DPAK) |
30000 |
只做正品原裝現(xiàn)貨 |
詢價 | ||
S |
23+ |
TO-252 |
10000 |
公司只做原裝正品 |
詢價 |
相關(guān)規(guī)格書
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