零件編號(hào) | 下載&訂購(gòu) | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
STD16 | Circuit Protection Solutions Low Voltage Fuse Links Catalogue | COOPER COOPER | COOPER | |
NPN Silicon Transistor Description ?Mediumpoweramplifierapplication Features ?PC(Collectordissipation)=2W(Ceramicsubstateof40×40×0.8mmused) ?Lowcollectorsaturationvoltage:VCE(sat)=0.15V(Typ.) ?ComplementarypairwithSTB1132 | AUK AUK corp | AUK | ||
NPN Silicon Transistor Description ?Mediumpoweramplifierapplication Features ?PC(Collectorpowerdissipation)=1W (Ceramicsubstateof250?×0.8tused) ?Lowcollectorsaturationvoltage: VCE(sat)=0.15V(Typ.) ?ComplementarypairwithSTB1132 | KODENSHIKODENSHI_AUK CORP. 可天士可天士光電子集團(tuán) | KODENSHI | ||
Extremely low gate charge Description ThesedevicesareN-channelPowerMOSFETsdevelopedusingMDmesh?M2technology.Thankstotheirstriplayoutandimprovedverticalstructure,thesedevicesexhibitlowon-resistanceandoptimizedswitchingcharacteristics,renderingthemsuitableforthemostdemandinghighefficienc | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán) | STMICROELECTRONICS | ||
N-channel 600 V, 0.260 Ω typ., 12 A MDmesh M6 Power MOSFET in a DPAK package Features ?Reducedswitchinglosses ?LowerRDS(on)perareavspreviousgeneration ?Lowgateinputresistance ?100avalanchetested ?Zener-protected Description ThenewMDmeshM6technologyincorporatesthemostrecentadvancementstothe well-knownandconsolidatedMDmeshfamilyof | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán) | STMICROELECTRONICS | ||
N-channel 650 V, 0.230 Ohm, 12 A MDmesh V Power MOSFET in DPAK, DPAK Description ThesedevicesareN-channelMDmesh?VPowerMOSFETsbasedonaninnovativeproprietaryverticalprocesstechnology,whichiscombinedwithSTMicroelectronics’well-knownPowerMESH?horizontallayoutstructure.Theresultingproducthasextremelylowon-resistance,whichisunmatcheda | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán) | STMICROELECTRONICS | ||
N - CHANNEL 60V - 0.07ohm - 16A DPAK/IPAK STripFET POWER MOSFET DESCRIPTION ThisPowerMOSFETisthelatestdevelopmentofSTMicroelectronicsunique”STripFET?strip-basedprocess.Theresultingtransistorshowsextremelyhighpackingdensityforlowon-resistance,ruggedavalanchecharacteristicsandlesscriticalalignmentstepsthereforearemarkablemanufa | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán) | STMICROELECTRONICS | ||
N - CHANNEL 60V - 0.07 ohm - 16A - DPAK STripFET POWER MOSFET DESCRIPTION ThisPowerMosfetisthelatestdevelopmentofSGS-THOMSONuniqueSingleFeatureSize?strip-basedprocess.Theresultingtransistorshowsextremelyhighpackingdensityforlowonresistance,ruggedavalancecharacteristicsandlesscriticalalignmentstepsthereforearemarkableman | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán) | STMICROELECTRONICS | ||
N - CHANNEL 60V - 0.07 ohm - 16A - TO-251 STripFET POWER MOSFET DESCRIPTION ThisPowerMosfetisthelatestdevelopmentofSTMicroelectronicsuniqueSingleFeatureSize?strip-basedprocess.Theresultingtransistorshowsextremelyhighpackingdensityforlowon-resistance,ruggedavalanchecharacteristicsandlesscriticalalignmentstepsthereforearemar | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán) | STMICROELECTRONICS | ||
N - CHANNEL 100V - 0.07ohm - 16A - IPAK/DPAK STripFET MOSFET DESCRIPTION ThisPowerMOSFETisthelatestdevelopmentofSGS-THOMSONunique”SingleFeatureSize”strip-basedprocess.Theresultingtransistorshowsextremelyhighpackingdensityforlowonresistance,ruggedavalanchecharacteristicsandlesscriticalalignmentstepsthereforearemarkablem | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán) | STMICROELECTRONICS | ||
N - CHANNEL 100V - 0.07 ohm - 16A DPAK STripFET POWER MOSFET DESCRIPTION ThisPowerMOSFETisthelatestdevelopmentofSTMicroelectronicsunique”SingleFeatureSize”strip-basedprocess.Theresultingtransistorshowsextremelyhighpackingdensityforlowon-resistance,ruggedavalanchecharacteristicsandlesscriticalalignmentstepsthereforearem | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán) | STMICROELECTRONICS | ||
N - CHANNEL 100V - 0.07 ohm - 16A DPAK STripFET POWER MOSFET DESCRIPTION ThisPowerMOSFETisthelatestdevelopmentofSTMicroelectronicsunique”SingleFeatureSize”strip-basedprocess.Theresultingtransistorshowsextremelyhighpackingdensityforlowon-resistance,ruggedavalanchecharacteristicsandlesscriticalalignmentstepsthereforearem | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán) | STMICROELECTRONICS | ||
N-channel 60V - 0.060 - 24A - DPAK/IPAK STripFET II Power MOSFET Description ThisPowerMOSFETisthelatestdevelopmentofSTMicroelectronicsuniqueSingleFeatureSize?strip-basedprocess.Theresultingtransistorshowsextremelyhighpackingdensityforlowon-resistance,ruggedavalanchecharacteristicsandlesscriticalalignmentstepsthereforearemark | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán) | STMICROELECTRONICS | ||
N-channel 60V - 0.060 - 24A - DPAK/IPAK STripFET II Power MOSFET Description ThisPowerMOSFETisthelatestdevelopmentofSTMicroelectronicsuniqueSingleFeatureSize?strip-basedprocess.Theresultingtransistorshowsextremelyhighpackingdensityforlowon-resistance,ruggedavalanchecharacteristicsandlesscriticalalignmentstepsthereforearemark | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán) | STMICROELECTRONICS | ||
N-channel 250V - 0.195廓 - 13A - DPAK/TO-220/TO-220FP Low gate charge STripFET??II Power MOSFET Description ThisPowerMOSFETseriesrealizedwithSTMicroelectronicsuniqueSTripFET?processhasspecificallybeendesignedtominimizeinputcapacitanceandgatecharge.Itisthereforesuitableasprimaryswitchinadvancedhighefficiency,high-frequencyisolatedDC-DCconvertersforTelec | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán) | STMICROELECTRONICS | ||
Thyristor-Diode Modules, Diode-Thyristor Modules | SIRECTIFIERSirectifier Semiconductors 矽萊克電子江蘇矽萊克電子科技有限公司 | SIRECTIFIER | ||
Thyristor-Diode Modules, Diode-Thyristor Modules | SIRECTIFIERSirectifier Semiconductors 矽萊克電子江蘇矽萊克電子科技有限公司 | SIRECTIFIER | ||
Thyristor-Diode Modules | SIRECTIFIERSirectifier Semiconductors 矽萊克電子江蘇矽萊克電子科技有限公司 | SIRECTIFIER | ||
Thyristor-Diode Modules, Diode-Thyristor Modules | SIRECTIFIERSirectifier Semiconductors 矽萊克電子江蘇矽萊克電子科技有限公司 | SIRECTIFIER | ||
Thyristor-Diode Modules | SIRECTIFIERSirectifier Semiconductors 矽萊克電子江蘇矽萊克電子科技有限公司 | SIRECTIFIER |
詳細(xì)參數(shù)
- 型號(hào):
STD16
- 功能描述:
保險(xiǎn)絲 16A 240VAC IND
- RoHS:
否
- 制造商:
Littelfuse
- 產(chǎn)品:
Surface Mount Fuses
- 電流額定值:
0.5 A
- 電壓額定值:
600 V
- 保險(xiǎn)絲類型:
Fast Acting
- 保險(xiǎn)絲大小/組:
Nano
- 尺寸:
12.1 mm L x 4.5 mm W
- 端接類型:
SMD/SMT
- 系列:
485
供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
---|---|---|---|---|---|---|---|
ST |
17+ |
TO-251 |
6200 |
詢價(jià) | |||
ST |
2020+ |
TO252 |
999 |
百分百原裝正品 真實(shí)公司現(xiàn)貨庫(kù)存 本公司只做原裝 可 |
詢價(jià) | ||
AUK |
2016+ |
SOT89 |
6000 |
只做原裝,假一罰十,公司可開17%增值稅發(fā)票! |
詢價(jià) | ||
24+ |
N/A |
1500 |
詢價(jià) | ||||
ST |
2015+ |
IPAKTO- |
12500 |
全新原裝,現(xiàn)貨庫(kù)存長(zhǎng)期供應(yīng) |
詢價(jià) | ||
ST |
24+ |
原廠原封 |
6523 |
進(jìn)口原裝公司百分百現(xiàn)貨可出樣品 |
詢價(jià) | ||
ST |
06+ |
?TO-252 |
1000 |
全新原裝 絕對(duì)有貨 |
詢價(jià) | ||
ST |
23+ |
TO-252 |
8795 |
詢價(jià) | |||
STMicro. |
23+ |
D2PAK |
7750 |
全新原裝優(yōu)勢(shì) |
詢價(jià) | ||
ST |
24+ |
6868 |
原裝現(xiàn)貨,可開13%稅票 |
詢價(jià) |
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