STD20NF06L

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent:ID=24A@TC=25℃ ·DrainSourceVoltage :VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=40mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC

STD20NF06L

60V N-Channel Enhancement ModePowerMOSFET

GeneralDescription TheSTD20NF06Lusesadvancedtrenchtechnologyand designtoprovideexcellentRDS(ON)withlowgatecharge. Itcanbeusedinawidevarietyofapplications. Features VDS=60V,ID=30A RDS(ON),25mΩ(Typ)@VGS=10V RDS(ON),30mΩ(Typ)@VGS=4.5V AdvancedTrenchTechnolo

STD20NF06L

60V N-Channel Enhancement Mode Power MOSFET

GeneralDescription TheSTD20NF06Lusesadvancedtrenchtechnologyand designtoprovideexcellentRDS(ON)withlowgatecharge. Itcanbeusedinawidevarietyofapplications. Features VDS=60V,ID=30A RDS(ON),25mΩ(Typ)@VGS=10V RDS(ON),30mΩ(Typ)@VGS=4.5V AdvancedTrenchTechnol

STD20NF06L-1

N-channel 60V - 0.032OHM - 24A - DPAK - IPAK STripFET II Power MOSFET

Description ThisPowerMOSFETisthelatestdevelopmentofSTMicroelectronicsunique“SingleFeatureSize?”stripbasedprocess.Theresultingtransistorshowsextremelyhighpackingdensityforlowon-resistance,ruggedavalanchecharacteristicsandlesscriticalalignmentstepsthereforearemar

STD20NF06LAG

Marking：D20NF06L；Package：DPAK；Automotive-grade N-channel 60 V, 32 mΩ typ., 24 A, STripFET II Power MOSFET in a DPAK package

Features ?AEC-Q101qualified ?Exceptionaldv/dtcapability ?100avalanchetested ?Lowgatecharge Applications ?Switchingapplications Description ThisPowerMOSFEThasbeendevelopedusingSTMicroelectronics'unique STripFETprocess,whichisspecificallydesignedtominimizein

STD20NF06LT4

N-channel 60V - 0.032廓 - 24A - DPAK - IPAK STripFET??II Power MOSFET

Description ThisPowerMOSFETisthelatestdevelopmentofSTMicroelectronicsunique“SingleFeatureSize?”stripbasedprocess.Theresultingtransistorshowsextremelyhighpackingdensityforlowon-resistance,ruggedavalanchecharacteristicsandlesscriticalalignmentstepsthereforearemar

STD20NF10

N-CHANNEL 100V - 0.038 ohm - 25A IPAK/DPAK LOW GATE CHARGE STripFET??II POWER MOSFET

Description ThisMOSFETseriesrealizedwithSTMicroelectronicsuniqueSTripFETprocesshasspecificallybeendesignedtominimizeinputcapacitanceandgatecharge.Itisthereforesuitableasprimaryswitchinadvancedhighefficiency,high-frequencyisolatedDC-DCconvertersforTelecomandCom

STD20NF20

N-channel 200V - 0.10廓 -18A- DPAK/TO-220/TO-220FP Low gate charge STripFET??Power MOSFET

Description ThisPowerMOSFETseriesrealizedwithSTMicroelectronicsuniqueSTripFET?processhasspecificallybeendesignedtominimizeinputcapacitanceandgatecharge.ItisthereforesuitableasprimaryswitchinadvancedhighefficiencyisolatedDC-DCconverters. Features ■Excep

STD2240NL

N-Channel E nhancement Mode Field Effect Transistor

FEATURES ●SuperhighdensecelldesignforlowRDS(ON). ●Ruggedandreliable. ●TO-252andTO-251Package.

STD22A12L01

Marking：12A；Package：DFN2020-3；1-Line High Power TVS Diode

Features 5400Wpeakpulsepower(8/20 Lowleakage:nAlevel Lowoperatingvoltage:12V Ultralowclampingvoltage Onepowerlineprotects Complieswithfollowingstandards: –IEC61000-4-2(ESD)immunitytest Airdischarge:±30kV Contactdischarge:±30kV –IEC61000-4-4(EFT)80A(5/50ns)