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STF10N60M2

Extremely low gate charge

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體集團

STB10N60M2

N-channel600V,0.550typ.,7.5AMDmeshIIPluslowQgPowerMOSFETsinD?PAK

Description ThesedevicesareN-channelPowerMOSFETsdevelopedusinganewgenerationofMDmesh?technology:MDmeshIIPlus?lowQg.TheserevolutionaryPowerMOSFETsassociateaverticalstructuretothecompanysstriplayouttoyieldoneoftheworldsloweston-resistanceandgatecharge.They

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體集團

STB10N60M2

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=7.5A@TC=25℃ ·DrainSourceVoltage-VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.6Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

STD10N60M2

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=7.5A@TC=25℃ ·DrainSourceVoltage-VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.6Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

STD10N60M2

N-channel600V,0.550typ.,7.5AMDmeshIIPluslowQgPowerMOSFETsinD?PAK

Description ThesedevicesareN-channelPowerMOSFETsdevelopedusinganewgenerationofMDmesh?technology:MDmeshIIPlus?lowQg.TheserevolutionaryPowerMOSFETsassociateaverticalstructuretothecompanysstriplayouttoyieldoneoftheworldsloweston-resistanceandgatecharge.They

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體集團

STFH10N60M2

Extremelylowgatecharge

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體集團

STL10N60M2

N-channel600V,0.580廓typ.,5.5AMDmeshIIPlus??lowQgPowerMOSFETinaPowerFLAT??5x6HVpackage

Description ThisdeviceisanN-channelPowerMOSFET developedusinganewgenerationofMDmesh? technology:MDmeshIIPlus?lowQg.This revolutionaryPowerMOSFETassociatesa verticalstructuretothecompany'sstriplayoutto yieldoneoftheworld'sloweston-resistanceand gatecharge

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體集團

STP10N60M2

N-channel600V,0.550typ.,7.5AMDmeshIIPluslowQgPowerMOSFETsinD?PAK

Description ThesedevicesareN-channelPowerMOSFETsdevelopedusinganewgenerationofMDmesh?technology:MDmeshIIPlus?lowQg.TheserevolutionaryPowerMOSFETsassociateaverticalstructuretothecompanysstriplayouttoyieldoneoftheworldsloweston-resistanceandgatecharge.They

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體集團

STP10N60M2

N-Channel650V(D-S)PowerMOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導體微碧半導體（臺灣）有限公司

STP10N60M2

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=7.5A@TC=25℃ ·DrainSourceVoltage-VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.6Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

詳細參數(shù)

  • 型號：

    STF10N60M2

  • 制造商：

    STMicroelectronics

  • 功能描述：

    POWER MOSFET - Rail/Tube

  • 功能描述：

    MOSFET N-CH 600V TO-220FP

  • 功能描述：

    MOSFET N-Channel 600V 7.5A TO-220FP

  • 功能描述：

    MOSFET N-Ch 600V 7.5A MDmesh II TO-220FP

  • 功能描述：

    N-channel 600V,0.56Ohm,7.5A Power MOSFET

  • 功能描述：

    600V,0.56,7.5A,N-Channel Power MOSFET

供應商型號品牌批號封裝庫存備注價格
STMicroelectronics
24+
TO-220FP
30000
晶體管-分立半導體產品-原裝正品
 詢價
ST/意法半導體
21+
TO-220F
4000
十年信譽,只做原裝,有掛就有現(xiàn)貨!
 詢價
ST(意法半導體)
23+
TO-220FP
10000
只做原裝現(xiàn)貨 假一賠萬
 詢價
ST/意法
24+
TO-220-3
2000
原廠授權代理 價格絕對優(yōu)勢
 詢價
ST/意法
22+
TO-220F
3000
原裝正品
 詢價
STM
23+
TO-220FP-3
2000
原裝現(xiàn)貨支持送檢
 詢價
ST專家
2021+
TO-220FP
6800
原廠原裝,歡迎咨詢
 詢價
ST
22+
30000
原裝現(xiàn)貨,可追溯原廠渠道
 詢價
ST(意法半導體)
23+
TO-220
7828
支持大陸交貨,美金交易。原裝現(xiàn)貨庫存。
 詢價
ST
2024+
N/A
70000
柒號只做原裝 現(xiàn)貨價秒殺全網
 詢價
更多STF10N60M2供應商 更新時間2025-2-24 17:34:00

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