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STF11NM65N

N-channel 650 V, 0.425 ohm typ., 11 A MDmesh ll Power MOSFET

Description ThesedevicesareN-channelPowerMOSFETsdevelopedusingthesecondgenerationofMDmesh?technology.ThisrevolutionaryPowerMOSFETassociatesaverticalstructuretothecompany’sstriplayouttoyieldoneoftheworld’sloweston-resistanceandgatecharge.Itisthereforesuit

STMICROELECTRONICSSTMicroelectronics

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STF11NM80

N-CHANNEL 800V - 0.35ohm - 11A TO-220/FP/D2PAK/TO-247 MDmesh Power MOSFET

Description TheMDmesh?associatesthemultipledrainprocesswiththecompany’sPowerMesh?horizontallayoutassuringanoutstandinglowonresistance.Theadoptionofthecompany’sproprietarystriptechniqueyieldsoveralldynamicperformancethatissignificantlybetterthanthatofsimilar

STMICROELECTRONICSSTMicroelectronics

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STF11NM80

Marking：F11NM80；Package：TO-220FP；N-channel 800 V, 0.35 Ω, 11 A MDmesh? Power MOSFET in D2PAK, TO-220FP, I2PAK, TO-220, TO-247

Features ■Lowinputcapacitanceandgatecharge ■Lowgateinputresistance ■BestRDS(on)*Qgintheindustry Applications ■Switchingapplications Description TheseN-channelPowerMOSFETsare developedusingSTMicroelectronics' revolutionaryMDmesh?technology,which associatesth

STMICROELECTRONICSSTMicroelectronics

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STF11NM80

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent–ID=11A@TC=25℃ ·DrainSourceVoltage- :VDSS=800V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.4Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·Designedforusein

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

STF110N10F7

isc N-Channel MOSFET Transistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

STF110N10F7

Marking：110N10F7；Package：TO-220FP；N-channel 100 V, 5.1 m廓 typ., 110 A, STripFET??VII DeepGATE?? Power MOSFETs in TO-220FP and TO-220 packages

STMICROELECTRONICSSTMicroelectronics

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STF11N50M2

Low gate input resistance

STMICROELECTRONICSSTMicroelectronics

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STF11N60DM2

N-channel 600 V, 0.370 (ohm) typ., 10 A MDmesh DM2 Power MOSFET in a TO-220FP package

STMICROELECTRONICSSTMicroelectronics

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STF11N65K3

Gate charge minimized

STMICROELECTRONICSSTMicroelectronics

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STF11N65K3

N-Channel MOSFET uses advanced trench technology

DOINGTERSHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

杜因特深圳市杜因特半導(dǎo)體有限公司

詳細(xì)參數(shù)

  • 型號(hào)：

    STF11

  • 功能描述：

    MOSFET N-channel 525 V 0.41 Ohm, 10 A SuperMESH3

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導(dǎo)通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風(fēng)格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

供應(yīng)商型號(hào)品牌批號(hào)封裝庫存備注價(jià)格
ST
1701+
?
7500
只做原裝進(jìn)口,假一罰十
 詢價(jià)
STMicroelectronics
24+
NA
3000
進(jìn)口原裝正品優(yōu)勢(shì)供應(yīng)
 詢價(jià)
22+
NA
3000
加我QQ或微信咨詢更多詳細(xì)信息,
 詢價(jià)
ST
23+
TO-220屬封
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價(jià)
ST
22+
TO2203
9000
原廠渠道,現(xiàn)貨配單
 詢價(jià)
ST
22+
TO-220F
66900
原廠原裝現(xiàn)貨
 詢價(jià)
ST
21+
TO-220屬封
10
一級(jí)代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力
 詢價(jià)
ST
23+
TO-220F
16900
正規(guī)渠道,只有原裝!
 詢價(jià)
ST/意法
22+
N
30000
十七年VIP會(huì)員,誠信經(jīng)營，一手貨源，原裝正品可零售！
 詢價(jià)
STMicroelectronics
2022+
原廠原包裝
6800
全新原裝 支持表配單 中國著名電子元器件獨(dú)立分銷
 詢價(jià)
更多STF11供應(yīng)商 更新時(shí)間2025-4-10 15:10:00

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