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STD11N65M2

Extremelylowgatecharge

Description ThesedevicesareN-channelPowerMOSFETsdevelopedusinganewgenerationofMDmesh?technology:MDmeshIIPlus?lowQg.TheserevolutionaryPowerMOSFETsassociateaverticalstructuretothecompanysstriplayouttoyieldoneoftheworldsloweston-resistanceandgatecharge.They

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STD11N65M2

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=7.0A@TC=25℃ ·DrainSourceVoltage-VDSS=650V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.68Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

STF11N65M2

Extremelylowgatecharge

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STFI11N65M2

Extremelylowgatecharge

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STFU11N65M2

N-channel650V,0.60typ.,7AMDmeshM2PowerMOSFETinaTO-220FPultranarrowleadspackage

Features ?Extremelylowgatecharge ?Excellentoutputcapacitance(COSS)profile ?100avalanchetested ?Zener-protected Description ThisdeviceisanN-channelPowerMOSFETdevelopedusingMDmeshM2 technology.Thankstoitsstriplayoutandanimprovedverticalstructure,thedevice

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STP11N65M2

Extremelylowgatecharge

Description ThesedevicesareN-channelPowerMOSFETsdevelopedusinganewgenerationofMDmesh?technology:MDmeshIIPlus?lowQg.TheserevolutionaryPowerMOSFETsassociateaverticalstructuretothecompanysstriplayouttoyieldoneoftheworldsloweston-resistanceandgatecharge.They

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STP11N65M2

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=7.0A@TC=25℃ ·DrainSourceVoltage-VDSS=650V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.68Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

STU11N65M2

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=7.0A@TC=25℃ ·DrainSourceVoltage-VDSS=650V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.68Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

STU11N65M2

Extremelylowgatecharge

Description ThesedevicesareN-channelPowerMOSFETsdevelopedusinganewgenerationofMDmesh?technology:MDmeshIIPlus?lowQg.TheserevolutionaryPowerMOSFETsassociateaverticalstructuretothecompanysstriplayouttoyieldoneoftheworldsloweston-resistanceandgatecharge.They

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
ST/意法
21+
TO-220F
3000
優(yōu)勢(shì)供應(yīng) 實(shí)單必成 可開(kāi)增值稅13點(diǎn)
 詢(xún)價(jià)
ST/意法
23+
TO-220-3
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢(xún)價(jià)
ST/意法
2022
TO-220-3
80000
原裝現(xiàn)貨,OEM渠道,歡迎咨詢(xún)
 詢(xún)價(jià)
ST/意法
23+
TO-220F
5000
原裝正品實(shí)單必成
 詢(xún)價(jià)
ST/意法
22+
TO-220F
20000
深圳原裝現(xiàn)貨正品有單價(jià)格可談
 詢(xún)價(jià)
ST/意法
2022+
TO-220-3
8000
只做原裝支持實(shí)單,有單必成。
 詢(xún)價(jià)
ST/意法
2023+
TO-220-3
50000
AI智能識(shí)別、工業(yè)、汽車(chē)、醫(yī)療方案LPC批量及配套一站
 詢(xún)價(jià)
ST
2016+
TO-220F
6528
房間原裝進(jìn)口現(xiàn)貨假一賠十
 詢(xún)價(jià)
STMicroelectronics
18+
NA
3000
進(jìn)口原裝正品優(yōu)勢(shì)供應(yīng)
 詢(xún)價(jià)
ST
22+23+
TO-220F
16160
絕對(duì)原裝正品全新進(jìn)口深圳現(xiàn)貨
 詢(xún)價(jià)
更多STF11N65M2IC供應(yīng)商 更新時(shí)間2025-1-27 14:04:00

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