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STI22NM60

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=22A@TC=25℃ ·DrainSourceVoltage-VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.25Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

STI22NM60N

IscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

STI22NM60N

N-channel600V,0.2廓,16AMDmesh??IIPowerMOSFET

Description ThesedevicesaremadeusingthesecondgenerationofMDmesh?technology.ThisrevolutionaryPowerMOSFETassociatesanewverticalstructuretothecompany’sstriplayouttoyieldoneoftheworld’sloweston-resistanceandgatecharge.Itisthereforesuitableforthemostdemanding

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STP22NM60

N-CHANNEL600V-0.19ohm-22ATO-220/FP/D2PAK/I2PAK/TO-247MDmesh??owerMOSFET

DESCRIPTION ThisimprovedversionofMDmesh?whichisbasedonMultipleDrainprocessrepresentsthenewbenchmarkinhighvoltageMOSFETs.Theresultingproductexhibitsevenloweron-resistance,impressivelyhighdv/dtandexcellentavalanchecharacteristics.TheadoptionoftheCompany’spropr

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STP22NM60

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=22A@TC=25℃ ·DrainSourceVoltage-VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.25Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

STP22NM60N

IscN-ChannelMOSFETTransistor

?FEATURES ?Lowinputcapacitanceandgatecharge ?Lowgateinputresistances ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation ?APPLICATIONS ?Switchingapplications

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

STP22NM60N

N-channel600V,0.2廓,16AMDmesh??IIPowerMOSFET

Description ThesedevicesaremadeusingthesecondgenerationofMDmesh?technology.ThisrevolutionaryPowerMOSFETassociatesanewverticalstructuretothecompany’sstriplayouttoyieldoneoftheworld’sloweston-resistanceandgatecharge.Itisthereforesuitableforthemostdemanding

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STW22NM60

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=22A@TC=25℃ ·DrainSourceVoltage-VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.25Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

STW22NM60

N-CHANNEL600V-0.19ohm-22ATO-220/FP/D2PAK/I2PAK/TO-247MDmesh??owerMOSFET

DESCRIPTION ThisimprovedversionofMDmesh?whichisbasedonMultipleDrainprocessrepresentsthenewbenchmarkinhighvoltageMOSFETs.Theresultingproductexhibitsevenloweron-resistance,impressivelyhighdv/dtandexcellentavalanchecharacteristics.TheadoptionoftheCompany’spropr

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STW22NM60N

IscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

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ST/意法
21+
TO-220F
3240
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ST/意法
20+
TO-220F
1000
進(jìn)口原裝現(xiàn)貨假一賠萬(wàn)力挺實(shí)單
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ST/意法
23+
TO-220F
8000
原裝正品實(shí)單必成
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ST/意法
23+
TO-220F
50000
全新原裝正品現(xiàn)貨,支持訂貨
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ST/意法
2022
TO-220F
80000
原裝現(xiàn)貨,OEM渠道,歡迎咨詢
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ST/意法
22+
TO-220F
20000
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ST/意法
2022+
TO-220FP
8000
只做原裝支持實(shí)單,有單必成。
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ST/意法
22+
TO-220F
300000
特供ST/意法半導(dǎo)體,專(zhuān)營(yíng)MCU十五年!
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ST/意法
2023+
TO-220F
20000
AI智能識(shí)別、工業(yè)、汽車(chē)、醫(yī)療方案LPC批量及配套一站
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ST/意法
22+
TO-220FP
17682
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更多STF22NM60NIC供應(yīng)商 更新時(shí)間2025-1-27 14:04:00